IRF7842TRPBF Allicdata Electronics
Allicdata Part #:

IRF7842PBFTR-ND

Manufacturer Part#:

IRF7842TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 18A 8-SOIC
More Detail: N-Channel 40V 18A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7842TRPBF datasheetIRF7842TRPBF Datasheet/PDF
Quantity: 8000
Stock 8000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7842TRPBF is a high-performance N-channel power MOSFET. It belongs to single FMOSFET which is widely used in electronic engineering field. This component is mainly used to drive mosfet and IGBT for on and off switching purpose in DC motors, actuators, electric welding, battery charging and other DC equipment.

The IRF7842TRPBF is a high-amplitude, low-input voltage N-channel power MOSFET, mainly used in the high-frequency switching circuits and motor control applications. It is provided in a TO-220 or SMD package and is typically operated in the linear region or the saturation region, depending on the needs of the particular application.

It has a breakdown voltage of 500V, gate threshold voltage of 4V, maximum drain current of 30A, maximum drain-source voltage of 100V, and on-resistance of 0.17Ω.

IRF7842TRPBF works on the principle of a voltage-controlled switch, where the voltage applied to the gate determines whether the mosfet will be off (open-circuit) or on (closed-circuit). The switching characteristics of the MOSFET are determined by the design of the MOSFET, the magnitude of the applied voltage, the capacitance at the gate, the drain-source current, the temperature, and other factors.

In the linear region of operation, the output voltage is directly proportional to the gate voltage and can be used to control the amount of current flowing through the MOSFET. In the saturation region, the output voltage is independent of the gate voltage and the MOSFET is then acting like a switch that is either open or closed.

The advantages of using IRF7842TRPBF are that the low on-resistance results in low losses and low heat dissipation and higher gains in speed and response time. The device offers fast switching and high frequency capabilities, making it a suitable choice for driving high-power switching circuits, such as those found in DC motor control, electric welding and other related applications.

Overall, the IRF7842TRPBF is a versatile, high-performance power MOSFET, suitable for many DC motor control and other related applications that require fast switching and high-frequency capabilities. It is particularly suitable for applications in which low power dissipation and high gains in speed and response time are key considerations.

The specific data is subject to PDF, and the above content is for reference

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