| Allicdata Part #: | IRF7853PBF-ND |
| Manufacturer Part#: |
IRF7853PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 8.3A 8-SOIC |
| More Detail: | N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8... |
| DataSheet: | IRF7853PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.9V @ 100µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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IRF7853PBF is a single-gate Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), which is a type of transistor used to control electrical signals. It works by using an electric field to control the flow of current in the device. MOSFETs are a type of Field-Effect Transistor (FET) that are commonly used in electronic devices because they are capable of high switching speeds and can handle large currents. The IRF7853PBF is designed to handle voltages up to 30V and currents up to 2A.
The IRF7853PBF has a variety of applications, such as power management, motor control, RF switching, audio circuits, power amplifier design, and other high-frequency or high-power applications. Additionally, it can be used to drive motors, such as solenoids and relays, and can be used to switch on and off high-voltage systems.
The working principle of MOSFETs is based on the concept of silicon controlled rectifier (SCR). A semiconductor material, such as silicon, is used in a junction between two different charged areas. As the applied voltage between the two areas increases, the current flow across the junction is increased as well.
When a MOSFET is in the "on" position, the gate-source voltage is positive and the channel that exists between the source and drain is opened. As a result, current can flow through the channel. When the IRF7853PBF is in the "off" position, the gate-source voltage is zero and the channel between the source and drain is closed. This mechanism is what makes the MOSFET switchable, and it is this feature that is used for controlling current and voltage in a variety applications.
The IRF7853PBF also has protection from over-voltage and over-current conditions. The device includes a Vgs-RdsOn safety feature that limits the gate-source voltage to a maximum of 25V when the device is operating in the on state. Additionally, it has a temperature-dependent protection feature that reduces the drain-source voltage to a safe level when the temperature of the device becomes too high. Both of these features reduce the potential for device overheating and failure by helping to maintain the device in its safe operating region.
The IRF7853PBF is a versatile transistor with a wide range of application possibilities. It can be used in power management systems, motor control systems, and RF switching circuits, as well as for audio transistors and high-power amplifier design. Due to its safety features, it is also suitable for applications where over-voltage or over-current conditions might result from incorrect wiring or device failure.
The specific data is subject to PDF, and the above content is for reference
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IRF7853PBF Datasheet/PDF