| Allicdata Part #: | IRF7854TRPBFTR-ND |
| Manufacturer Part#: |
IRF7854TRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 80V 10A 8-SOIC |
| More Detail: | N-Channel 80V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  IRF7854TRPBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.9V @ 100µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1620pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13.4 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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What is IRF7854TRPBF & Its Application Field & Working Principle
The IRF7854TRPBF is an advanced planar N-channel power MOSFET that are used in many design applications such as DC-DC converters, synchronous buck converters, solar panel inverters, hot-swap power supplies, and other AC/DC power control applications. It has become a popular choice for designers creating half-bridge or full-bridge circuits for a variety of high-current and high-voltage MOSFET applications.
The IRF7854TRPBF belongs to a family of vertical double-diffused metal-oxide semiconductor field-effect transistors (MOSFETs) known as single-disk MOSFETs. It has an advanced planar stripe pixel alignment that optimizes its on-state performance, making it well-suited for high-performance, high-efficiency applications. It is also built with Infineon\'s patented vertical trench power MOSFET technology which enables high current and high-voltage operation without an external gate drive.
The IRF7854TRPBF is optimizing an On-Resistance (RDS(ON)) which prevents power dissipating and can remain in the low resistance state over a wide voltage range. This is called \'body diode\' or \'parasitic diode\' because it also consists of two anti serially connected diodes. The body of the MOSFET reverse-bias this diode referred to as an \'avalanche diode\' due to the strong electric field amplification that occurs when the reverse breakdown voltage is exceeded. This diode will clamp the drain-source voltage to prevent damage to the MOSFET in the event of an overvoltage.
The IRF7854TRPBF is using a single gate to control its on-state performance and reduce its current conduction. The wide body area adjacent to the gate allows for an efficient heat transfer to the PCB, leading to an optimized performance. This MOSFET also offers a fast switching speed with a low gate-drain capacitance, enabling good noise immunity and extremely low referencevoltage. This MOSFET is usually used in applications where high efficiency and robustness are critical.
The main applications of IRF7854TRPBF are in DC-DC converters, synchronous buck converters, solar panel inverters, hot-swap power supplies and other AC/DC power control applications. It can be found in a wide range of devices and machines, including automotive, home automation, renewable energy, building automation and industrial controls. It is a highly efficient MOSFET choice in high-current and high-voltage applications and is often used in half-bridge and full-bridge circuits. It also helps to reduce power dissipation and offers multiple features like low gate charge, low RDS(ON), fast switching time and robustness.
The working principle of IRF7854TRPBF is that it act like a switch which is used to control the flow of current. Applying a voltage to the Gate can open or close the channel between the Source and the Drain, which then turns the MOSFET ON or OFF. When it is ON, current flow will be allowed between the Source and Drain terminals. When it is OFF, no current is allowed to flow. The IRF7854TRPBF also has a Body Diode, which protects the MOSFET from excessive reverse voltage.
In conclusion, the IRF7854TRPBF is a versatile power MOSFET designed for a broad range of applications, including DC-DC converters,synchronous buck converters, solar panel inverters and hot-swap power supplies. It is an advanced planar N-channel MOSFET that optimizes an On-Resistance to prevent power dissipation and remains in a low resistance state over a wide voltage range. Additionally, the single gate it utilizes helps reduce its current conduction, making it a popular choice for half-bridge and full-bridge circuits. Its fast switching time, low gate-drain capacitance and low reference voltage also make it an ideal choice for high-current and high-voltage applications that require excellent efficiency and robustness.
The specific data is subject to PDF, and the above content is for reference
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