Allicdata Part #: | IRF820STRR-ND |
Manufacturer Part#: |
IRF820STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 2.5A D2PAK |
More Detail: | N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
DataSheet: | IRF820STRR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF820STRR is a non-magnetic, high-frequency field-effect transistor (FET) ideal for switching applications. It is manufactured using the latest advanced high-speed FET technology for extraordinary quality, performance, and reliability. This FET is well-suited for use in telecommunications, industrial, and computing applications, as well as for applications requiring high-efficiency switching.
IRF820STRR applications include high frequency switching, high power amplifier, high power switch, and motor control. It has become a reliable choice for signal and power amplification, as well as for reconfiguring current paths in a variety of applications. This FET is commonly used in applications like switching, amplifier, RF amplifier, RF switch, RF power amplifier, Class C amplifier, and power supply.
The IRF820STRR is a depletion-mode FET that uses a silicon-on-insulator (SOI) process. This FET has a low on-resistance of 200 mOhms, a low gate capacitance of 0.6 pF, and a low threshold voltage of 2.7V. Its maximum junction temperature is up to 175°C. The IRF820STRR offers fast switch times, excellent frequency performance and exceptional ESD protection.
The working principle of a FET is based on the gate voltage. It has three terminals, gate, source, and drain. The gate, along with the other two terminals, is connected to an electric field, and acts like a capacitor that stores electric charges. When the gate voltage is made positive, electrons from the source fill up the semiconductor material creating a conducting channel in the process. This allows current to flow through the drain. When the gate voltage is made negative, the conducting channel is broken, thus preventing any current flow.
In short, the IRF820STRR FET is a reliable, high-frequency, high-efficiency switching device that is suitable for a variety of applications. It is renowned for its low resistance, high frequency performance, wide temperature range, and its ability to protect circuits against electrostatic discharge. Whether used for switching, signal transmission, or power amplification, the IRF820STRR is a reliable and efficient choice.
The specific data is subject to PDF, and the above content is for reference
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