Allicdata Part #: | IRF830AL-ND |
Manufacturer Part#: |
IRF830AL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 5A TO262-3 |
More Detail: | N-Channel 500V 5A (Tc) 3.1W (Ta), 74W (Tc) Through... |
DataSheet: | IRF830AL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF830AL is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in many industrial applications. It is a single junction MOSFET which means that it has a single gate rather than a gate and source connection.
MOSFETs are devices that use voltage to control the current flowing through them. The main advantage of the IRF830AL is that it can handle voltages up to 150 volts and its low on-state resistance results in minimum power dissipation. It is suitable for use in many applications such as switching, radio frequency (RF) amplifiers and voltage regulators.
The IRF830AL is typically used in a variety of applications such as power supplies, switching circuits, motor control, and protection circuits. It is most commonly used in applications that require high current densities, such as DC-DC converters, RF amplifiers, LED drivers and motor control circuits. In addition, it can also be used for automotive and aviation applications. Its high power switching capability, together with low threshold voltage makes it a suitable choice for many applications.
The working principle of the IRF830AL is based on the principle of using voltage to control the current that flows through it. Its gate and source terminals are connected together and it provides a very low on-state resistance. When the voltage applied to its gate is greater than the threshold voltage (Vgs > Vt), the device will be in its ‘on’ state and current will flow through the device. Conversely, when the voltage applied to its gate is lower than the threshold voltage of the device (Vgs < Vt) then it will be in its ‘off’ state and no current will flow through the device. This can be useful in situations where current needs to be switched on or off in order to control the output of the device.
In conclusion, the IRF830AL MOSFET is a widely used type of transistor that is suitable for a variety of applications such as power supplies, switching circuits, motor control, protection circuits and more. It is capable of handling a wide range of voltages and currents, and its low on-state resistance makes it a cost-effective option. Its working principle is based on the principle that voltage can be used to control the flow of current, which makes it useful in situations where current needs to be switched on or off in order to control the output of the device.
The specific data is subject to PDF, and the above content is for reference
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