Allicdata Part #: | IRF840AL-ND |
Manufacturer Part#: |
IRF840AL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A TO-262 |
More Detail: | N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Throug... |
DataSheet: | IRF840AL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1018pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF840AL is a high-voltage and high-current field effect transistor (FET) with excellent switching performance. This device is suitable for applications requiring low threshold drive and low gate charge. It has a drain-source breakdown voltage of 450V, a drain current of 18A, a total gate charge of 6.1nC and a total capacitance of 25pF. This makes the IRF840AL suitable for a variety of applications, especially in the automotive and industrial fields.
The IRF840AL belongs to a larger family of FETs called Metal Oxide Semiconductor FETs (MOSFETs). It is a single MOSFET, meaning it has a single channel that can conduct current in one direction when a voltage is applied. This type of FET is typically used in medium and high power switching applications, and is extremely efficient when it comes to power dissipation.
The working principle of an IRF840AL is based on two phenomena: Electron tunneling and field-effect action. Electron tunneling is the flow of electrons through an extremely small gap between two conducting surfaces. Field-effect action is a phenomenon in which the shape of an electric field affects the current flow in a conductive material. The IRF840AL relies on these two phenomena to enable current modulation and efficient power switching.
The IRF840AL is typically used in applications requiring efficient low-voltage operation, such as switching power supplies, DC/DC converters, motor drives, and in motor control applications. Its low gate charge and threshold voltage allow the IRF840AL to be used in applications requiring high switching speed and fast response times. The device also features built-in protection features such as over-temperature and over-current protection.
In conclusion, the IRF840AL is a high-voltage, high-current MOSFET designed for applications requiring high efficiency and low gate charge. Its low threshold voltage and total gate charge make it highly suitable for medium and high power switching applications, while its built-in protection features make it safe and reliable. Because of its versatile capabilities, the IRF840AL is widely used in automotive, industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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