Allicdata Part #: | IRF840AS-ND |
Manufacturer Part#: |
IRF840AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A D2PAK |
More Detail: | N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surfac... |
DataSheet: | IRF840AS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1018pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF840AS is a metal-oxide-semiconductor field-effect transistor (MOSFET) with an N-channel that is designed for applications in different fields, primarily for low-power switches and amplifier designs. The IRF840AS is a single gate MOSFET, which has a wide variety of applications from telecom receivers and power amplifiers to power supplies and motor controls.
This MOSFET has the advantages of low gate drive voltage, low output capacitance, fast switching speed, low noise, and excellent temperature stability. The external gate source and drain regions are isolated by an extremely thin silicon dioxide layer. This allows for high electrical isolation and an absence of gate leakage current. Due to its structure, the IRF840AS is also very resistant to ESD, or electrostatic discharge.
The main benefit of using this MOSFET lies in its working principle. This type of transistor works by using an electric field to control the conductivity of a channel between two terminals known as its source and drain. By applying a voltage to a gate electrode, an electric field is created between the source and drain terminals, which modulates the channel’s conductive properties. This creates a resistor between the two terminals, which can either pass or block electric current, depending on the voltage applied to the gate.
The IRF840AS has several characteristics which make it an attractive choice for many applications. It has a high current gain as well as strong immunity to environmental changes such as temperature, pressure, and humidity. Additionally, it offers a steady current gain over a wide temperature range, making it a good choice for use in applications that require consistent performance over a large temperature range.
The IRF840AS is a highly reliable and efficient device that can offer excellent performance in low-power switching and amplifier designs. It is used in applications ranging from telecom receivers and power amplifiers, to motor control and power supplies. This versatile device can provide reliable operation in many different fields, making it a popular choice for many types of electronic projects.
The specific data is subject to PDF, and the above content is for reference
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