Allicdata Part #: | IRF840ASTRL-ND |
Manufacturer Part#: |
IRF840ASTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A D2PAK |
More Detail: | N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surfac... |
DataSheet: | IRF840ASTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1018pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF840ASTRL Application Field and Working Principle
IRF840ASTRL is an advanced metal-oxide-semiconductor field-effect transistor (MOSFET) with a maximum breakdown voltage of 80 V and an on-resistance of 0.88 ohms. It was developed by International Rectifier and is part of the Power MOSFET family of transistors. This device provides low on-resistance, fast switching speed, and lower processing temperatures than other types of transistors.
Application Fields
The IRF840ASTRL is widely used in many electronic applications, including motor control, light dimming, AC/DC power converters, and audio amplifiers. It is also used in fields such as automotive, industrial, and consumer electronics.
The IRF840ASTRL is used as an electronic switch, allowing current to flow between its source and drain electrodes when activated. This makes it an ideal device for DC-DC power conversion, as it can switch between different load demands without any significant current heating in the device. Additionally, the device has a low on-resistance, which provides good efficiency in the power circuits and prevents unnecessary power loss.
Moreover, due to its high breakdown voltage and fast switching speed, the IRF840ASTRL is also suitable for use in LED lighting systems, allowing the LED to be turned ON or OFF quickly and efficiently. In addition, the device can be used as a switch in smart home systems, allowing the user to control the lighting and temperature of their homes remotely.
Working Principle
The IRF840ASTRL MOSFET utilizes a voltage gate terminal to control the current flow between its source and drain electrodes. When there is no voltage difference between the gate and the source, no current will flow between the source and drain. When a positive voltage is applied to the gate terminal, the device is turned on and current can flow between the source and drain. When the gate voltage is reversed and a negative voltage is applied, the device turns off and current is prevented from flowing between the source and drain.
The device also features low input capacitance, which helps reduce the power dissipation and minimize switching losses. The low input capacitance also improves the device\'s switching response time, making it suitable for applications that require fast switching speeds. Furthermore, it has excellent noise immunity, which reduces power supply and ground noise and prevents false signal noise when controlling the device.
Overall, the IRF840ASTRL is an advanced MOSFET device providing high voltage, low on-resistance, and fast switching speeds. It can be used in a variety of applications, including motor control, light dimming, and AC/DC power converters. Its low input capacitance, high breakdown voltage, and excellent noise immunity make it one of the most reliable and efficient power transistors available today.
The specific data is subject to PDF, and the above content is for reference
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