IRF840PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF840PBF Application Field and Working Principle

IRF840PBF is an efficient, high power MOSFET which is widely used in various application fields. It is compatible with standard industry interface protocols and can be used to build large and complex circuits. This MOSFET utilizes a unique design structure and is capable of delivering reliable performance.The IRF840PBF is a type of MOSFET which is known as a single-gate field-effect transistor. It has a single gate which is used to control the flow of electrons through the MOSFET. This makes it an ideal choice for a wide range of applications, particularly when high power is required. The IRF840PBF is capable of driving up to 1.5A of current.One of the most common application for the IRF840PBF is switching power supply designs. It can be used to regulate the output of an power supply circuit. The IRF840PBF can also be used to create low-frequency switching solutions such as those found in LED technology. Furthermore, the MOSFET can be used to switch a wide range of loads including resistive, capacitive, and inductive loads.Additionally, the IRF840PBF is also commonly used to create switches and amplifiers. This is due to its high power, low on-state resistance, and fast switching characteristics. It can be used in Class A, B, AB, and G amplifier designs. Additionally, it can also be used to create wireless networks and even wireless radios.In order to understand how the IRF840PBF works, it is important to understand the underlying principles of a MOSFET. A MOSFET is a type of transistor which consists of three terminal. The middle terminal is known as the gate and its used to control the flow of electrons from the source to the drain. The main difference between this transistor and a traditional BJT is the physical arrangement of its terminals. The gate terminal is insulated from the other two terminals and is used to control the flow of electrons.When the gate voltage is low, no current can flow from the source to the drain. When the voltage is increased, the MOSFET’s internal electric field is increased and current begins to flow. This makes the MOSFET ideal for controlling small signals as well as large currents.The IRF840PBF utilizes this MOSFET technology to provide an efficient and reliable device. Its performance is regulated by the gate voltage, meaning that it can be easily controlled and manipulated. Furthermore, its high power output makes it an ideal choice for a variety of different applications.In conclusion, the IRF840PBF is an efficient and reliable MOSFET which is used in a variety of different applications. Its single-gate design makes it a simple and cost-effective solution. Additionally, its high power output allows it to handle large currents, making it ideal for switching power supplies, amplifiers, and other high-power applications. Its performance is regulated by the gate voltage, making it very easy to control. Overall, the IRF840PBF is an ideal choice for any application which requires reliable performance and cost-efficiency.

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