| Allicdata Part #: | IRF8707GPBF-ND |
| Manufacturer Part#: |
IRF8707GPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 11A 8-SOIC |
| More Detail: | N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  IRF8707GPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 11.9 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF8707GPBF is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is constructed from silicon, and contains two metal gates. One gate is used to control the current flow through the device to its output, and the other gate is used for the input signal that is applied to the device.
The IRF8707GPBF can be used in a variety of applications such as power management and switching, as well as in audio amplifiers and other circuits that require high-frequency operation. It can handle high voltages and currents, and it is stable and reliable.
The working principle of the IRF8707GPBF is based on the gate voltage controlling the channel between the source and the drain. When a positive gate voltage is applied to the device, the channel is opened and current can flow through it. When the gate voltage is negative, the channel is closed, preventing the flow of current.
The IRF8707GPBF is also capable of operating in a linear mode. This mode is achieved by controlling the gate voltage so that the channel does not open or close completely. In this mode, the device can act as an amplifier, and is useful for circuits that require precise control of signals.
The IRF8707GPBF can be used for high-side switching, meaning that it can switch large voltages and currents from the ground to the load. It is also suitable for low-side switching, which is useful for circuits that rely on precise control of low-voltage, low-current signals.
The IRF8707GPBF is also suitable for power conversion applications due to its high efficiency and linear mode operation. It can be used in DC-DC converters and AC-DC converters, and can provide power regulation and protection.
The IRF8707GPBF is an excellent choice for a wide variety of power management and switching applications, as well as for audio amplifiers and other circuits that require high-frequency operation. Its high voltage and current handling capabilities, as well as its ability to switch in various modes, make it a reliable and versatile transistors for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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