IRFH7004TR2PBF

IRFH7004TR2PBF is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that has been optimized for use in high-speed switching applications. It is housed in a TO-252 (DPAK) surface mount package. The device is useful in many applications including switching and linear power amplifiers. This MOSFET comes with various features that make it suitable for specific applications.

The device is composed of the following parts: the drain, gate, and source, which are the ultimate power components. Drain and source are connected to one another and the gate is connected to the source. In order to energize the MOSFET and make it active, a voltage must be applied to the gate. The voltage difference between the gate and the source is known as the Gate Threshold Voltage (V GS ) and it is the primary factor in determining how the device performs.

When V GS is below the threshold voltage, the MOSFET is in the off state, and it does not conduct current. When V GS exceeds the threshold voltage, the MOSFET is on and it will then conduct current from the drain to the source. This voltage difference, known as V GS(th), is one of the most important factors to consider when selecting the device for a particular application. The I RFH7004TR2PBF has a V GS(th) of 4.5 V, making it suitable for high-speed switching applications.

The device also comes with several other features that make it suitable for specific applications. For example, it has an average on-resistance (R DS on) of only 5.5 mΩ and a high current carrying capacity of 7 A. This makes it ideal for linear power amplifiers and other high current applications. Additionally, the device has an optimized high gate to drain breakdown voltage of 100 V, making it suitable for high-voltage applications.

The IRFH7004TR2PBF is a versatile device and can be used for a variety of applications. It is used frequently in audio amplifiers, motor drive circuits, power converters, and industrial controllers. Additionally, the device can be used in automotive applications due to its robust construction and low-voltage operational characteristics.

In conclusion, the IRFH7004TR2PBF is an optimized N-channel MOSFET that is suitable for power switching and linear power amplifiers. It is composed of three parts: the drain, gate, and source, and its high-voltage breakdown and low resistance make it an ideal choice for many applications. Additionally, the device has an optimized gate to drain breakdown voltage of 100 V, making it suitable for high-voltage applications. Thus, the IRFH7004TR2PBF is a great candidate for many power electronic applications.