IRFH8325TR2PBF Allicdata Electronics
Allicdata Part #:

IRFH8325TR2PBFCT-ND

Manufacturer Part#:

IRFH8325TR2PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 17A 5X6 PQFN
More Detail: N-Channel 30V 21A (Ta), 82A (Tc) 3.6W (Ta), 54W (T...
DataSheet: IRFH8325TR2PBF datasheetIRFH8325TR2PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2487pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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An IRFH8325TR2PBF is a dual N-channel depletion mode metal oxide semiconductor field effect transistor (MOSFET). As its name suggests, this type of transistor has two MOSFETs — each one is controlled by its own gate — and both feature a depletion mode. It is designed for linear as well as switching-mode applications in consumer and automotive electronics, such as computers, televisions, cell phones, and car audio amplifiers. The IRFH8325TR2PBF can be used as a power switch in high-voltage applications, where it is capable of controlling tens or even hundreds of volts.

The IRFH8325TR2PBF is a depletion mode device, meaning that it uses a p-type substrate and needs a negative voltage to turn on. This is the opposite of an enhancement mode mosfet, which needs a positive voltage to turn on. The negative voltage causes the depletion mode FET to act like a resistor or switch, depending on the voltage applied to its gate. The threshold voltage of the IRFH8325TR2PBF is -4V, meaning that the gate must be pulled to a voltage below -4V to activate the device.

The main application field of the IRFH8325TR2PBF is as a power switch in high-voltage systems. When a voltage is applied to its gate, the transistor becomes “on”, allowing current to flow from the source to the drain. As a result, the IRFH8325TR2PBF can be used as a power switch to control the voltage and current flowing through a circuit.

The working principle of the IRFH8325TR2PBF is based on controlling the current flow between the source and the drain by applying a voltage to its gate. When the voltage at the gate is below the threshold voltage of the device, the device is off, and no current can flow between the source and the drain. When the gate voltage is above the threshold voltage, the device is turned on and current is allowed to flow through the device.

In addition to its power switching capabilities, the IRFH8325TR2PBF also offers protection against overtemperature and overcurrent conditions. It features a thermal shutdown circuit which turns the device off if the temperature at the FET exceeds a certain level. It also features a current limiting circuit which turns the device off if the current exceeds a certain level.

The IRFH8325TR2PBF is a versatile MOSFET which can be used in a variety of linear and switching-mode applications in consumer and automotive electronics. It is capable of controlling higher voltage and current than other devices in its class, making it an ideal power switch for high-voltage applications. Its working principle is based on controlling the current flow between the source and the drain by applying a voltage to its gate, and it features protection against overtemperature and overcurrent conditions.

The specific data is subject to PDF, and the above content is for reference

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