Allicdata Part #: | IRFHP8334TRPBFTR-ND |
Manufacturer Part#: |
IRFHP8334TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 30V 25A POWER 8-SO |
More Detail: | MOSFET 30V 25A POWER 8-SO |
DataSheet: | IRFHP8334TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The IRFHP8334TRPBF is a highly efficient and reliable voltage field effect transistor (FET) designed to provide optimal performance in applicable applications. The FET features a low On-resistance, making it ideal for use in power electronics, motor control, and lighting applications. Additionally, the FET has a high breakdown voltage of 30V and low operating temperature range, making it suitable for use in high-temperature applications.
A field effect transistor is a semiconductor device that is used to amplify or switch electronic signals or current. FETs are divided into two types: unipolar transistors and bipolar transistors. Unipolar FETs, such as the IRFHP8334TRPBF, are composed of a single p-type channel surrounded by the source and drain electrodes. The source and drain electrodes are connected by the junction that forms a single channel connected to the gate.
The working principle of the IRFHP8334TRPBF can be demonstrated using an example. When the voltage applied to the FET\'s gate is higher than the threshold voltage, the electrons in the channel move to the source (negative) side, leaving behind a hole. This hole, combined with the electrons in the drain (positive) side, creates a large electric field, resulting in the effective switching of the FET.
The IRFHP8334TRPBF is well-suited for use in a range of applications, including power management, motor control, lighting, and automotive systems. In power conversion and management applications, the FET can be used to boost efficiency as well as to provide improved audio and video performance. Additionally, the FET can be used to accurately switch signals on higher power levels and reduce power dissipation in DC/DC converters. In motor control applications, the FET can be used to control the speed and torque of motorized movement. The device is also suitable for use in lighting applications, as it can provide both dimming and color control. Finally, in automotive systems, the FET can be used to reduce fuel consumption and improve engine performance.
In summary, the IRFHP8334TRPBF is a highly efficient and reliable voltage FET that is suitable for a range of dynamic applications, from power management to motor control and lighting. The FET offers a low On-resistance and high breakdown voltage, making it ideal for high-temperature applications. Additionally, the IRFHP8334TRPBF is able to accurately switch signals on higher power levels, reduce power dissipation, and improve engine performance. As such, the FET is well-suited for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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