Allicdata Part #: | IRFI530G-ND |
Manufacturer Part#: |
IRFI530G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 9.7A TO220FP |
More Detail: | N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-... |
DataSheet: | IRFI530G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFI530G is a single button MOSFET transistor. It is a widely used transistor due to its wide range of applications and wide operating temperature range. This article will discuss the IRFI530G\'s application field and working principle, as well as its characteristics and usage.
Application Field
The IRFI530G is a widely used transistor for a variety of applications. It is a single MOSFET that can be used in a wide range of general purpose applications such as power tools, toys, consumer electronics, automotive, and industrial control. It is also used in motor drives, DC/DC and AC/DC switching applications. It can be used as an available source or source follower in many applications. It is also able to be used as a current source and current switching element.
Working Principle
The IRFI530G is a MOSFET type transistor, with the source and gate connected together. When a voltage is applied to the gate, the current flows from the source to the drain. This current flow creates a possibility of conducting current without the need for a large current as it does not require a large drop of voltage across the load. As the voltage applied to the gate is increased, the current flowing between the source and drain increases exponentially.
The IRFI530G is an insulated gate FET that operates with a linear region for the input voltage. That means that the current flowing between the source and drain can be determined by the voltage applied to the gate. It also means that the device can act as both a source follower and a pull-up resistor depending on the application.
Characteristics
The IRFI530G is designed to be used in applications that require a high level of efficiency. It has a low gate threshold voltage, meaning that it can be used efficiently in power electronics applications. It also has a low operating temperature range, making it suitable for temperature-sensitive applications. Additionally, the device has a high breakdown voltage, which makes it ideal for high switching frequencies.
Usage
The IRFI530G is a widely used device for a range of applications. It is ideal for switching applications as it can be used to control the flow of current without requiring a large current flow. Additionally, it can be used as both a source follower and pull-up resistor, depending on the application requirements. It is also suitable for use in temperature-sensitive applications, due to its low operating temperature range.
In conclusion, the IRFI530G is a single button MOSFET transistor, widely used for a variety of applications including power tools, toys, consumer electronics, automotive, and industrial control. It is an insulated gate FET with a linear region for input voltage, a low gate threshold voltage, a low operating temperature range and a high breakdown voltage. It is suitable for applications requiring a high level of efficiency and can be used to control the flow of current without requiring a large current flow. As such, it is an ideal device for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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