IRFI530G Allicdata Electronics
Allicdata Part #:

IRFI530G-ND

Manufacturer Part#:

IRFI530G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 9.7A TO220FP
More Detail: N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-...
DataSheet: IRFI530G datasheetIRFI530G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFI530G is a single button MOSFET transistor. It is a widely used transistor due to its wide range of applications and wide operating temperature range. This article will discuss the IRFI530G\'s application field and working principle, as well as its characteristics and usage.

Application Field
The IRFI530G is a widely used transistor for a variety of applications. It is a single MOSFET that can be used in a wide range of general purpose applications such as power tools, toys, consumer electronics, automotive, and industrial control. It is also used in motor drives, DC/DC and AC/DC switching applications. It can be used as an available source or source follower in many applications. It is also able to be used as a current source and current switching element.

Working Principle
The IRFI530G is a MOSFET type transistor, with the source and gate connected together. When a voltage is applied to the gate, the current flows from the source to the drain. This current flow creates a possibility of conducting current without the need for a large current as it does not require a large drop of voltage across the load. As the voltage applied to the gate is increased, the current flowing between the source and drain increases exponentially.

The IRFI530G is an insulated gate FET that operates with a linear region for the input voltage. That means that the current flowing between the source and drain can be determined by the voltage applied to the gate. It also means that the device can act as both a source follower and a pull-up resistor depending on the application.

Characteristics
The IRFI530G is designed to be used in applications that require a high level of efficiency. It has a low gate threshold voltage, meaning that it can be used efficiently in power electronics applications. It also has a low operating temperature range, making it suitable for temperature-sensitive applications. Additionally, the device has a high breakdown voltage, which makes it ideal for high switching frequencies.

Usage
The IRFI530G is a widely used device for a range of applications. It is ideal for switching applications as it can be used to control the flow of current without requiring a large current flow. Additionally, it can be used as both a source follower and pull-up resistor, depending on the application requirements. It is also suitable for use in temperature-sensitive applications, due to its low operating temperature range.

In conclusion, the IRFI530G is a single button MOSFET transistor, widely used for a variety of applications including power tools, toys, consumer electronics, automotive, and industrial control. It is an insulated gate FET with a linear region for input voltage, a low gate threshold voltage, a low operating temperature range and a high breakdown voltage. It is suitable for applications requiring a high level of efficiency and can be used to control the flow of current without requiring a large current flow. As such, it is an ideal device for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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