Allicdata Part #: | IRFI510GPBF-ND |
Manufacturer Part#: |
IRFI510GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 4.5A TO220FP |
More Detail: | N-Channel 100V 4.5A (Tc) 27W (Tc) Through Hole TO-... |
DataSheet: | IRFI510GPBF Datasheet/PDF |
Quantity: | 998 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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Introduction to IRFI510GPBF
IRFI510GPBF is a high-voltage N-channel FET that is designed for use in a variety of power management, motor control and load switching applications. This device can be used as a solid state switch that can be independently sourced and sink current when needed. It offers an ultra-low on-resistance as small as 0.7 ohms and a control voltage as low as 4V.IRFI510GPBF Application Field
This FET can be used in many application fields. It can be used for Level Shifting and Chopper Circuits, High Voltage Switching applications, Power Supplies, Instruments, Medical and Lighting Control, HV DC/DC converters, Stepper Motor Driver, Lamps and Bulbs, Solar Photovoltaics, Ultrasound equipment and HV Motors, etc.Working Principle of IRFI510GPBF
The working principle of IRFI510GPBF can be simplified into two main parts – static and dynamic.In static operation, the FET behaves like a linear resistor. For example, when the gate voltage is 0V, the device acts like a resistor with a very low source-drain resistance.When the gate voltage is greater than 4V, the device behaves like a switch with a very high source-drain resistance. When the voltage exceeds its VGS(th) specification, the FET will turn on and create a low-impedance path between its source and drain.In dynamic operation, the FET is used as a controlled switch for higher power applications. The behavior of the device is determined by its switching times, which are measured as turn on/off and rise/fall times.Conclusion
In conclusion, the IRFI510GPBF is a high-voltage N-channel FET that is designed for use in a variety of power management, motor control and load switching applications. It offers an ultra-low on-resistance and a control voltage as low as 4V. The device can be statically and dynamically operated, with static operation behaving like a resistor and dynamic operation acting as a controlled switch. This makes the FET suitable for use in a wide range of application fields.The specific data is subject to PDF, and the above content is for reference
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