Allicdata Part #: | IRFI4410ZGPBF-ND |
Manufacturer Part#: |
IRFI4410ZGPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 43A TO220AB |
More Detail: | N-Channel 100V 43A (Tc) 47W (Tc) Through Hole TO-2... |
DataSheet: | IRFI4410ZGPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4910pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFI4410ZGPBF is a single N-Channel power logic MOSFET with excellent power dissipation and low on-state resistance. This MOSFET is primarily used in high power switching applications, buzzing loss prevention circuits and ESP (Energy Saving Power) Circuits. It consists of an N-Type MOSFET (metal oxide semiconductor field effect transistor) which is formed by the junction of a metal electrode, a semiconductor layer and an insulator.
The IRFI4410ZGPBF is especially well-suited for applications that require a low channel resistance. It has an extremely low on-state resistance with maximum values at and below 4 Ohms. The gate resistance of this MOSFET is also extremely low - less than 4 Ohms, making it ideal for switching applications.
The IRFI4410ZGPBF is typically used for high power switching applications, such as high-efficiency AC/DC and DC/DC converters. It is also used for applications such as LED lighting, panel and strut protection, heating, air conditioning and industrial equipment power. It is also used in HDD (Hard Disk Drive) protection and pulse-by-pulse current limit circuits.
The working principle of IRFI4410ZGPBF is relatively simple. The key component of this MOSFET is the MOS structure, which is formed by stacking a metal electrode, a semiconductor layer and an insulator, forming a N-Type MOSFET. When the gate voltage is applied, the electrons get forced to move from the source to the drain due to the signal electric field. This forces the flow of electric current through the device. The source-drain electric field acts as a controlling voltage, which can control the turn-on and turn-off state of the device.
The IRFI4410ZGPBF is a very versatile device which has many applications. It can be used in high power switching applications, as well as power supply noise reduction, drive and control of motors, as well as circuits that require low on-state resistance. Additionally, the low gate resistance makes it particularly suitable for buzzing loss prevention circuits and ESP Circuits.
In conclusion, the IRFI4410ZGPBF is an excellent choice for applications that require low channel resistance and low gate resistance. It is suitable for a wide variety of applications, including high power switching and power supply noise reduction. It is also suitable for drive and control of motors, buzzing loss prevention circuits and ESP Circuits.
The specific data is subject to PDF, and the above content is for reference
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