IRFI740G

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The IRFI740G is a single insulated gate field-effect transistor (IGFET) manufactured using advanced high-voltage CMOS (HVCMOS) technology. The device is designed to serve as a high-voltage, fast-switching, low on-resistance switch in applications such as current sensing, over-temperature protection and level-shifting circuits.

It features a low voltage rating of 14 V, a breakdown voltage of 700 V, low gate charge (4 nC typical going up to 6 nC for -20 V), low gate-source threshold voltage (-2.2 V typical) and soft turn-on characteristics (that is, the device starts to conduct at 4.5V gate-source voltage). The switching characteristics are also excellent, with maximum on-resistance of 0.4 ohms for 20V.

The IRFI740G is fabricated with a vertical DMOS process, which makes the device suitable for integration in switching power applications. The device has an integrated body diode with a low forward voltage drop (1.1 V typical). The body diode makes the device suitable for reverse polarity protection, while the built-in gate protection circuit allows the device to withstand high voltages without damage.

The device features a polarization layer, which is a thin dielectric layer that increases the breakdown voltage of the transistor. This high breakdown voltage allows it to be used in high-voltage applications. The device also features a low reverse transfer resistance and high transconductance, making it suitable for high current applications.

The working principle of the IRFI740G is based on the coupled action of the gate and drain electrodes. When a voltage is applied between the gate and the source, a channel of electrons is formed between the source and the drain, allowing current to flow through it. The drain current is controlled by the gate voltage, with the drain current rising with increasing gate voltage. Depending on the application, the gate voltage can be positive or negative.

The IRFI740G can be used in a wide range of applications, including switching power supplies, AC/DC converters, motor drives, camera circuits, and resonant converters. It is also suitable for level shifting circuits and current sensing applications, such as solar power inverters and battery management systems. The device is also suitable for use in over-temperature protection circuits, where it can be used to shut off current flow when a certain temperature is exceeded.

The IRFI740G is a versatile device, with features that make it suitable for a variety of applications. Its low on-resistance, high breakdown voltage, and low gate charge make it an excellent choice for high power applications, while its high transconductance makes it suitable for high current applications. Its integrated body diode proves helpful in reverse polarity protection, while its gate protection circuit allows it to withstand high voltages without damage. Its soft turn-on characteristics allow it to be used in level shifting circuits, and its wide temperature range allows it to be used in over-temperature protection circuits.

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