Allicdata Part #: | IRFIB6N60APBF-ND |
Manufacturer Part#: |
IRFIB6N60APBF |
Price: | $ 3.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 5.5A TO220FP |
More Detail: | N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole TO-... |
DataSheet: | IRFIB6N60APBF Datasheet/PDF |
Quantity: | 68 |
1 +: | $ 3.04290 |
10 +: | $ 2.71530 |
100 +: | $ 2.22636 |
500 +: | $ 1.80281 |
1000 +: | $ 1.52043 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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An IRFIB6N60APBF is a type of Field Effect Transistor (FET) belonging to the family of Metal-Oxide-Semiconductor FETs, or MOSFETs. The "PF" in the type designation stands for Power FET, indicating that this transistor is intended for applications that require greater power handling capabilities than other FETs. The IRFIB6N60APBF is a single-transistor device, meaning that it has just one semiconductor channel, as opposed to dual-transistor devices that have two.
A FET is a type of transistor which uses an electric field to control the current flowing through it. It is an active device, meaning that it consumes energy to amplify, attenuate, or switch an electrical signal. MOSFETs are a type of FET which use metal-oxide-semiconductor technology to control the current. This type of transistor has a high input impedance and low power consumption. This makes it ideal for use in digital circuits, as it requires very little current to turn on or off, allowing it to be switched quickly.
The IRFIB6N60APBF is a 60 volt MOSFET with an avalanche rating of 5.5 amp, making it suitable for use in high-power applications such as motor control and lighting. It has a low gate-source capacitance of 485 pF, allowing it to be driven quickly and efficiently. The maximum drain-source voltage is 600 volts, and the maximum drain current is 8 amps. This makes the IRFIB6N60APBF an excellent choice for applications in which high current needs to be switched or controlled.
The IRFIB6N60APBF works by using the electric field generated from the gate to control the current that flows through the channel. When a positive voltage is applied to the gate, the electric field pulls electrons from the source to the drain, allowing a current to flow. When the gate is brought to zero volts, the electric field is shut off and the electrons are no longer pulled from the source. This effectively stops the flow of current through the device.
The IRFIB6N60APBF is an ideal choice for applications that require high power switching and control. This device is able to handle high currents and voltages, while still providing fast switching times due to its low gate-source capacitance. As a result, it is a popular choice for applications such as motor control, lighting, and other high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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