IRFIZ44GPBF Allicdata Electronics
Allicdata Part #:

IRFIZ44GPBF-ND

Manufacturer Part#:

IRFIZ44GPBF

Price: $ 2.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 30A TO220FP
More Detail: N-Channel 60V 30A (Tc) 48W (Tc) Through Hole TO-22...
DataSheet: IRFIZ44GPBF datasheetIRFIZ44GPBF Datasheet/PDF
Quantity: 33
1 +: $ 2.11050
10 +: $ 1.90701
100 +: $ 1.53235
500 +: $ 1.19181
1000 +: $ 0.98750
Stock 33Can Ship Immediately
$ 2.32
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFZ44GPBF is an N-channel power MOSFET transistor that is commonly used in modern day computers and other electronic devices. It is a MOSFET (metal oxide silicon field-effect transistor) that is designed to act as a switch between two terminals to regulate the flow of current through the circuit.

The IRFZ44GPBF MOSFET is identified by a number of different characteristics, such as its maximum voltage rating, its gate charge, its maximum drain current and its on-resistance. It is available in single and dual die versions, with the latter optimized for higher power applications.

The IRFZ44GPBF is used in a variety of different applications, such as high efficiency DC-DC converters, switching applications, voltage controllers, PFC (Power Factor Correction) circuits, motor control, load switch circuits and high speed switching applications.

As a device, the IRFZ44GPBF is able to operate at very high temperatures, and is also able to handle high voltages, making it a suitable choice for applications in which precise control of high currents is required.

The working principle of the IRFZ44GPBF is based on the MOSFET’s ability to control the flow of current between its source and drain terminals with a relatively small amount of gate voltage. Unlike other MOSFETs, the IRFZ44GPBF allows the flow of current to be regulated even when there is no gate voltage applied.

In order to constitute a flow of current, the IRFZ44GPBF requires a certain amount of voltage between the source and drain terminals. This voltage is known as the ‘gate voltage’, and is necessary for the MOSFET’s operation. As the voltage increases, the current also increases, and vice versa.

The IRFZ44GPBF also includes a built-in body diode, which enables the flow of current to be reversed when the gate voltage is reversed. This body diode, along with the gate voltage, act as a speed controller, and allows the IRFZ44GPBF to be used in applications where fast switching speeds are required.

In addition to the body diode, the IRFZ44GPBF also contains an ESD (electrostatic discharge) protection diode, which helps to protect the device from electrical disturbances and increases its reliability.

Overall, the IRFZ44GPBF offers many features and benefits when used in its various applications and is a popular choice among engineers. With its simple workings, reliability and ease of use, it is no wonder why it is so widely used.

The specific data is subject to PDF, and the above content is for reference

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