Allicdata Part #: | IRFI1310N-ND |
Manufacturer Part#: |
IRFI1310N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 24A TO220FP |
More Detail: | N-Channel 100V 24A (Tc) 56W (Tc) Through Hole TO-2... |
DataSheet: | IRFI1310N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFI1310N is a kind of n-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is the single MOSFETs and falls into the category of transistors, specifically FETs and MOSFETs. It is a much smaller device with less power loss compared to BJTs and IGBTs. As a result, it is a suitable choice for many applications ranging from consumer electronics to industrial control systems.
TheIRFI1310N is a three-terminal device, with a source, gate and drain. It has an N-type channel, meaning that electrons can easily flow from the source to the drain. The control of this electron flow and the amount of current that passes through the device is dictated by the gate voltage, which is usually supplied by an external voltage source. By controlling the gate voltage, the user can regulate the amount of current passing through the device, and hence, the output power of the device.
The IRFI1310N can be used in a variety of applications. It is usually used in circuits to switch devices on and off, or to control the flow of current in devices. It can also be used to provide protection from over-currents, or to amplify an audio signal. In addition, it can be used in power supplies to regulate the amount of current passing through the device and to provide a stable voltage.
The working principle of the IRFI1310N is based on the principle of field effect transistor. This principle states that the amount of current passing through the device is controlled by the electric field created by a gate electrode. When a suitable voltage is applied to the gate electrode, it creates an electric field which attracts the electrons from the source to the drain, thus allowing a current to flow through the device.
The IRFI1310N is a popular device in the electronic industry due to its versatility and small size. It is often used in consumer devices, such as mobile phones and laptops, as well as in industrial control systems. Its high efficiency, small size and low power consumption make it a suitable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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IRFI520GPBF | Vishay Silic... | 1.27 $ | 617 | MOSFET N-CH 100V 7.2A TO2... |
IRFIZ14GPBF | Vishay Silic... | 1.32 $ | 812 | MOSFET N-CH 60V 8A TO220F... |
IRFIZ24GPBF | Vishay Silic... | 1.43 $ | 410 | MOSFET N-CH 60V 14A TO220... |
IRFI510GPBF | Vishay Silic... | -- | 998 | MOSFET N-CH 100V 4.5A TO2... |
IRFI644GPBF | Vishay Silic... | -- | 124 | MOSFET N-CH 250V 7.9A TO2... |
IRFI3205PBF | Infineon Tec... | -- | 557 | MOSFET N-CH 55V 64A TO220... |
IRFI840GPBF | Vishay Silic... | -- | 906 | MOSFET N-CH 500V 4.6A TO2... |
IRFI740GPBF | Vishay Silic... | -- | 318 | MOSFET N-CH 400V 5.4A TO2... |
IRFI820GPBF | Vishay Silic... | -- | 270 | MOSFET N-CH 500V 2.1A TO2... |
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IRFI9634GPBF | Vishay Silic... | -- | 616 | MOSFET P-CH 250V 4.1A TO2... |
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IRFI4510GPBF | Infineon Tec... | 1.55 $ | 586 | MOSFET N CH 100V 35A TO22... |
IRFI634GPBF | Vishay Silic... | -- | 355 | MOSFET N-CH 250V 5.6A TO2... |
IRFI630GPBF | Vishay Silic... | -- | 678 | MOSFET N-CH 200V 5.9A TO2... |
IRFI9Z24GPBF | Vishay Silic... | -- | 66 | MOSFET P-CH 60V 8.5A TO22... |
IRFIBF20GPBF | Vishay Silic... | -- | 985 | MOSFET N-CH 900V 1.2A TO2... |
IRFI4410ZGPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 43A TO22... |
IRFI9Z34GPBF | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 12A TO220... |
IRFI9540GPBF | Vishay Silic... | 2.9 $ | 960 | MOSFET P-CH 100V 11A TO22... |
IRFIZ48G | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 37A TO220... |
IRFI840G | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.6A TO2... |
IRFI1310N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 24A TO22... |
IRFI520N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 7.6A TO2... |
IRFI530N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 12A TO22... |
IRFIZ24E | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 14A TO220... |
IRFIZ34E | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 21A TO220... |
IRFIZ46N | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 33A TO220... |
IRFIZ48N | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 36A TO220... |
IRFI740G | Vishay Silic... | -- | 1000 | MOSFET N-CH 400V 5.4A TO2... |
IRFI510G | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 4.5A TO2... |
IRFI530G | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 9.7A TO2... |
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IRFI620G | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 4.1A TO2... |
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