IRFI9Z24GPBF Allicdata Electronics
Allicdata Part #:

IRFI9Z24GPBF-ND

Manufacturer Part#:

IRFI9Z24GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 8.5A TO220FP
More Detail: P-Channel 60V 8.5A (Tc) 37W (Tc) Through Hole TO-2...
DataSheet: IRFI9Z24GPBF datasheetIRFI9Z24GPBF Datasheet/PDF
Quantity: 66
Stock 66Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFI9Z24GPBF is a MOSFET device that is used in a variety of applications. A MOSFET is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and it is a type of transistor that can be used to control and regulate current flow. The IRFI9Z24GPBF is ideal for switching, power management, and motor control applications. It is rated at 200V, 28A, and 210mΩ. It has a RDS(on) of 0.210Ω and a package of PowerFLAT 8x8.When it comes to operation and working principle, the IRFI9Z24GPBF works on the basis of a metal-oxide-semiconductor field-effect principle. This is an electric field which exists between the metal and the semiconductor, which effects the strong attraction between them. By using the voltage applied to the junction gates, the field-effect is used to establish either an n-type or p-type transistor through the depletion or enhancement of carriers across the junction. The junction gates acts as a switch to turn on/off this connection.

In operation, the IRFI9Z24GPBF is able to act as a switch by creating an electric field that separates the semiconductor from the metal gate. This electric field can be manipulated by changing the voltage levels applied to the gate so that it will be either enabled or disabled. In other words, by changing the voltage levels, it can be turned on/off to establish current flow or not.This MOSFET is particularly useful in switching applications due to its ability to control current flow. By applying a certain voltage, the device can act as a switch to either allow or block the current flow. This makes it an ideal choice for applications that require a precise control over current flow. Additionally, it is capable of withstanding a high operating temperature, up to 175°C, making it suitable for applications in harsher environments.

The IRFI9Z24GPBF can also be used in power management applications. In these types of applications, the device can be used to regulate the current and voltage levels that are supplied to a given circuit. By applying different voltages and currents, it can be used to establish a required power supply level or to manage the power levels within a circuit. This makes it ideal for these types of applications.Finally, the IRFI9Z24GPBF can also be used in motor control applications. By applying a specific voltage, the MOSFET is able to control the speed and direction of a motor. This makes it an ideal choice for motor control applications, as it is capable of providing precise control over the motor\'s operation.The IRFI9Z24GPBF is an incredibly versatile device that can be used in a wide array of applications. Its ability to control current flow, regulate voltage levels, and work in harsh environments makes it an ideal choice for many applications. Therefore, it is no wonder why it is such a popular choice for many engineers and designers.

The specific data is subject to PDF, and the above content is for reference

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