Allicdata Part #: | IRFIZ24GPBF-ND |
Manufacturer Part#: |
IRFIZ24GPBF |
Price: | $ 1.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 14A TO220FP |
More Detail: | N-Channel 60V 14A (Tc) 37W (Tc) Through Hole TO-22... |
DataSheet: | IRFIZ24GPBF Datasheet/PDF |
Quantity: | 410 |
1 +: | $ 1.29780 |
10 +: | $ 1.17054 |
100 +: | $ 0.94059 |
500 +: | $ 0.73157 |
1000 +: | $ 0.60616 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 8.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFIZ24GPBF is a standard enhancement mode N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and is widely used in various electronics applications. It is a pre-passivated device with a maximum drain current of 24 amperes and a maximum drain-source voltage of 55 volts. The IRFIZ24GPBF device is offered in a TO-247-3 package.
IRFIZ24GPBF is primarily used in load switching, signal line protection, voltage level shifting, and pre-drivers in the automotive, industrial and consumer applications. This MOSFET can be used to switch the load in various circuits. It is also used for power supply optimization in power management circuits. Due to its low on-state resistance, the IRFIZ24GPBF device is ideal for switching applications in power processing circuits.
The working principle of an IRFIZ24GPBF MOSFET involves the formation of a channel by the application of a small gate-source voltage. This channel is formed because the electrons are attracted from the gate to the source. The electrons form the channel and the full drain-source current is allowed to flow when the voltage is applied to the gate. The electrons produced due to the gate voltage induce a repulsive force on the electrons located in the channel. When the repulsive force becomes equal to the attractive force of the gate, the drain-source current that flows in the channel will be equal to the gate-source current.
The IRFIZ24GPBF has a high transconductance Gm, which is the ratio between the output voltage and the input current. With a high transconductance, the IRFIZ24GPBF can respond quickly to the changes in the gate voltage, enabling faster switching times. The high transconductance of this MOSFET is useful for signal processing applications. It ensures that the input signal is correctly captured and the output signal is correctly connected.
The IRFIZ24GPBF has a low input capacitance. This can be beneficial in circuits that require high speed pulsed operation. When the input voltage is applied, the MOSFET starts conducting current almost instantaneously. This ability helps to reduce switching delays, increases circuit efficiency and helps to reduce the temperature rise. The low input capacitance also allows the device to operate at low voltages.
The IRFIZ24GPBF has an appropriate thermal resistance, which is an important factor in determining the power dissipation of the device. When the temperature rises, the IRFIZ24GPBF dissipates more heat and as a result, the power dissipation will increase. In order to keep the heat dissipation within the device’s rated limit, the IRFIZ24GPBF must be used with appropriate cooling systems. It is highly recommended to use the device in applications where there is constant air flow to maintain proper thermal dissipation.
The IRFIZ24GPBF is a very versatile N-channel MOSFET and can be used for multiple applications in various fields. It is suitable for high power switching, signal line protection and control, pre-driver for motor applications, level shifting and power supply optimization. With its low on-state resistance and high transconductance, it helps to ensure efficient operation of power processing circuits. Furthermore, its low input capacitance helps reduce switching delays and its suitable thermal resistance helps maintain the device’s power dissipation. Thus, the IRFIZ24GPBF is a perfect choice for multiple electronics applications.
The specific data is subject to PDF, and the above content is for reference
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