IRFI820GPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	360pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.1A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction The IRFI820GPBF is an insulated-gate field effect transistor (IGFET) designed to be used in power transistor applications. It is an enhancement-mode control device, meaning that when no external voltage is applied to its gate, the device is off and current does not flow from the drain to the source. When a negative voltage is applied to the gate, current flows from the drain to the source and the device is in its “on” state.Application Field The IRFI820GPBF has a very low on-state resistance, making it suitable for use in power applications where low power losses are important. It is often used as a switch in voltage converters, and has been used in motor control applications such as brushless DC motor controllers. It has also found applications in AC motor speed control and resonant switching systems.Construction The IRFI820GPBF is a single integral drain and source FET, meaning the device has only one drain terminal and one source terminal. It is a vertical double drift structure, meaning the drain, source and gate regions are all located in the vertical plane of the device. The dimensions of the package are 4.7 x 3.1 x 0.85 mm, and it has an insulated gate region and a trench gate structure.Working PrincipleThe principle of operation for the IRFI820GPBF is based on the concept of modulating the channel current of the FET by changing the potential at the gate. When no voltage is applied to the gate electrode, the FET is in its off state, and the channel between the drain and source is narrowed due to the presence of the insulation layer at the gate. When a negative voltage is applied to the gate, electrons are attracted to the gate and the channel widens due to electron repulsion, allowing current to flow from the source to the drain.Performance The IRFI820GPBF has an on-state resistance of only 4 milli-Ohms, and is rated for up to 7.2 amps of continuous drain current. Its voltage rating is 40 volts. It has a very low switching time of only 1 nanosecond and a very low gate to drain threshold voltage of 0.7V. The device has a wide temperature range of -40 to 150°C, making it suitable for use in a variety of applications.Conclusion The IRFI820GPBF is a single-drain FET device that is well-suited for power applications due to its low on-state resistance and high current rating. It is also a fast switching device with a low threshold voltage. Additionally, its wide temperature range makes it suitable for use in a variety of applications.

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