Allicdata Part #: | IRFI510G-ND |
Manufacturer Part#: |
IRFI510G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 4.5A TO220FP |
More Detail: | N-Channel 100V 4.5A (Tc) 27W (Tc) Through Hole TO-... |
DataSheet: | IRFI510G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFI510G is an enhancement-mode, n-channel power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is suitable for the most demanding electronic switching applications. It features a small footprint, low drain-source on-state resistance, fast switching performance, and excellent thermal performance.
The IRFI510G is a MOSFET device that has a number of different benefits compared to other forms of electronic switches. It is a very popular choice for switching applications due to its low on-state resistance, fast switching speeds, and excellent thermal performance. Additionally, it is also very light and easy to install.
The IRFI510G is typically used in power-management, control and drive circuits, motor control, and switching applications. It is also commonly used in switching power supplies, fly wheel converters, inverters, amplifiers, and mobile devices. The device is also well suited for the control of high voltage, power, and current.
One of the main advantages of the IRFI510G is its capacity to operate at very high power levels, while still being able to be operate efficiently and in a low power mode. Additionally, it can help to reduce the amount of heat generated during operation, due to its low internal resistance. This helps to make the device highly reliable over long periods of time.
The working principle of the IRFI510G is very similar to that of other electronic switching devices. It works by providing a voltage reference to the gate terminal of the MOSFET. A small current is then passed through the gate, which will modify the channel conductivity and allow current to flow. The small current is usually supplied by the control circuit, so it is important to ensure that it is correctly set.
The voltage reference at the gate is typically set to five volts, which will be applied when the device is turned on. The gate currents required for this will vary depending on the application, but a standard gate current will typically be around 10mA. This is sufficient to provide a good enough even switching from low- to high-voltage states.
The IRFI510G is a versatile MOSFET device that can be used in many different applications. It is a popular choice for power-management and switching applications due to its low on-state resistance, fast switching speed, and excellent thermal performance. It can be used to switch both DC and AC currents, and can be used in a range of voltage levels. The device offers very stable and reliable operation, making it ideal for many high-power and high-load electrical applications.
The specific data is subject to PDF, and the above content is for reference
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