Allicdata Part #: | IRFI9634GPBF-ND |
Manufacturer Part#: |
IRFI9634GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 250V 4.1A TO220FP |
More Detail: | P-Channel 250V 4.1A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | IRFI9634GPBF Datasheet/PDF |
Quantity: | 616 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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An IRFI9634GPBF transistor is a type of metal-oxide-silicon field-effect transistor (MOSFET) that enables control of the current flowing through it. The IRFI9634GPBF is an N-channel enhancement-mode power MOSFET that can be used in various applications. It is a single transistor, meaning that it consists of one source (S), one drain (D) and one gate (G).
When using a MOSFET, you should select one that meets the voltage and power needs of your application. The gate voltage applied to the IRFI9634GPBF can determine whether current flows through it or not. It has a gate-source voltage (Vgs) range of 4 V to 10 V and a gate-drain voltage (Vgd) range of 4 V to 10 V. It has a drain-source voltage (Vds) range of 60 V and a continuous drain current (Id) range of 17 A.
The IRFI9634GPBF has a total gate charge (Qg) of 93 nC. This allows you to control the turn-on and turn-off times of the device. It also has a low gate-to-drain charge (Qgd) of 1 nC, reducing switching losses and allowing for a faster response time. Its maximum operating junction temperature is 150°C, allowing it to be used in high temperature applications. Furthermore, it has a low package thermal resistance of 2.45 K/W, which helps to reduce power dissipation and improve reliability.
Applications of the IRFI9634GPBF include controlling the on/off switching of power supplies, controlling the flow of current to motors, lights, solenoids and other devices. It can also be used to switch transient currents, such as those in high speed circuits. The IRFI9634GPBF is suitable for applications such as consumer electronics, telecommunications and automotive systems.
The working principle of the IRFI9634GPBF is based on the application of a voltage difference between its source and drain. When a voltage is applied between the gate and the source, the channel between the source and the drain is induced and current flows through the drain. The amount of current that can flow between the source and the drain depends on the voltage applied to the gate. The voltage applied to the drain can control the amount of current that flows through the device. The gate voltage is also used to turn off the device.
The IRFI9634GPBFis a versatile power MOSFET that can be used in a variety of applications. It has an extended voltage and power range, low gate charge and low package thermal resistance, allowing it to be used in high temperature and high speed applications. Its wide operating range and high drain current make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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