Allicdata Part #: | IRFI630G-ND |
Manufacturer Part#: |
IRFI630G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 5.9A TO220FP |
More Detail: | N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | IRFI630G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.9A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFI630G is a 6A single n-channel MOSFET. It is part of a family of Insulated Gate Bipolar Transistors (IGBTs) from Infineon Technologies. MOSFETs are transistors that control the flow of current in an electrical circuit. The IRFI630G is designed for power conversion applications, particularly for use in motor control, DC/DC converters, switch-mode power supplies, inverters, and so on. This article will discuss the application field and working principle of the IRFI630G.
The IRFI630G enables high efficiency power conversion by providing a low on-resistance of 0.087Ω and a low-on- state voltage at 5V. These features help reduce power losses and improve system performance. It also features a high maximum drain current of 6A, which means it can handle higher power switching requirements. Furthermore, it is rated for operation at a maximum operating temperature of 175°C and comes in the TO-220AB package. These features make it suitable for applications in harsh environments and in confined spaces.
The IRFI630G uses an insulated gate bipolar transistor or IGBT, which is a type of transistor made of p-type and n-type semiconductor materials. A MOSFET is also a type of transistor, but instead of p-type and n-type semiconductor materials, it uses a metal oxide semiconductor channel which has a lower resistance. The IGBT is a combination of a field-effect transistor and a bipolar junction transistor, hence its name. This allows it to provide high voltage and current control capabilities with fast switching speeds.
The IRFI630G works by using a metal oxide semiconductor as a gate electrode. When a voltage is applied to the gate, a conducting channel is created between the source and the drain. This channel can be modulated by varying the voltage applied to the gate, allowing the current across the channel to be regulated. When the gate voltages are increased, the current is increased, and conversely when the gate voltages are decreased, the current is decreased. This modulation of the current through the channel is what allows the MOSFET to be used as a switch in digital circuits.
In its application field, the IRFI630G is suitable for use in numerous power conversion applications. It can be used in motor control devices, DC/DC converters, switch-mode power supplies, inverters, and more. It is also useful in applications such as AC/DC rectifiers, intelligent lighting control systems, railway systems, and renewable energy systems. In all these applications, the IRFI630G is a powerful and reliable transistor for controlling the current flow in an electrical circuit.
In summary, the IRFI630G is a powerful 6A single n-channel MOSFET from Infineon Technologies. It is designed for power conversion applications and its low on-resistance, high maximum drain current, and TO-220AB package make it suitable for use in various applications. Moreover, it works by using a metal oxide semiconductor as gate electrode and its current can be modulated to act as a switch in digital circuits. Thus, the IRFI630G can be used in numerous applications involving power conversion and associated areas.
The specific data is subject to PDF, and the above content is for reference
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