Allicdata Part #: | IRFIBF20GPBF-ND |
Manufacturer Part#: |
IRFIBF20GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 900V 1.2A TO220FP |
More Detail: | N-Channel 900V 1.2A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | IRFIBF20GPBF Datasheet/PDF |
Quantity: | 985 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 720mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFIBF20GPBF is a single-specified MOSFET which stands for Metal Oxide Semiconductor Field-Effect Transistor. It is a voltage-controlled device that shows a specific increase in electrical conduction when a gate voltage is applied. It operates by controlling the flow of electrons underneath its gate, allowing more electrons to pass from the source to the drain through the channel when a positive gate voltage is applied. This particular MOSFET is produced by International Rectifier.
IRFIBF20GPBF has a variety of applications, ranging from regulators and filters in power supplies and switching applications, lightning protection in telecoms equipment, power conversion applications, and motor control. It is used in a wide range of consumer, industrial, and automotive electronics, including laptops, stereos, cell phones, washing machines, and power tools. It is also used in automotive engine control and fuel injection systems. IRFIBF20GPBF is also ideal for applications where long-term reliability, performance, and scalability are essential.
In terms of its working principle, IRFIBF20GPBF is driven by a controlled gate bias across the gate oxide. This causes the MOSFET to turn on or off, allowing the flow of current between the source and the drain. As the gate voltage increases, the current carrying capability of the MOSFET increases. When the gate voltage goes below a certain threshold, the MOSFET will turn off and no current flows through it. The amount of current that can flow through the MOSFET is also dependent on the applied drain-source voltage. When the drain-source voltage is at its highest, the MOSFET will be in its \'on\' state, allowing more current to flow through it.
IRFIBF20GPBF offers a range of benefits and features that make it well-suited for any application. Its performance is reliable and consistent under harsh conditions, and it offers low on-resistance and low gate charge for low power consumption. The device also provides excellent ESD protection, and has a wide operating temperature range to ensure reliable operation in high-temperature environments. Additionally, the device is RoHS compliant, meaning it is free of hazardous substances, making it an ideal choice for applications that must comply with environmental regulations.
In conclusion, IRFIBF20GPBF is a single-specified MOSFET that offers a range of features and benefits for a wide variety of applications. It is highly reliable under harsh conditions and is RoHS compliant, making it an environmental-friendly choice. Its working principle is driven by a controlled gate bias and can provide excellent current carrying capability. All these features make it ideal for use in a range of applications, including power supplies, telecoms equipment, automotive electronics, and fuel injection systems.
The specific data is subject to PDF, and the above content is for reference
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