| Allicdata Part #: | IRFI640GPBF-ND |
| Manufacturer Part#: |
IRFI640GPBF |
| Price: | $ 1.65 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 9.8A TO220FP |
| More Detail: | N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-... |
| DataSheet: | IRFI640GPBF Datasheet/PDF |
| Quantity: | 894 |
| 1 +: | $ 1.65000 |
| 10 +: | $ 1.60050 |
| 100 +: | $ 1.56750 |
| 1000 +: | $ 1.53450 |
| 10000 +: | $ 1.48500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 5.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.8A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFI640GPBF is a silicon N-channel enhancement-mode Vertical DMOS power field effect transistor (FET) manufactured by International Rectifier. It features very low on-resistance and is suitable for operation with 5V gate drive with minimal gate charge. This device is typically used in high-side load switch, DC-DC converter, high efficiency DC motor controls, solar panel applications and other similar power applications.
The IRFI640GPBF is housed in a single-in-line (SIL) 3mm x 3mm PowerPAK SC-70 package. With its very low on-resistance, the device is designed to have superior thermal performance, allowing for low self heating at high current operation, and low thermal resistance for efficient heat conduction. Additionally, its high peak current rating offers better performance for high energy applications.
The working principle of the IRFI640GPBF is relatively simple. It consists of a three-layer MOSFET structure consisting of an n-channel between source and drain and an insulated gate. A voltage applied to the gate allows current to pass through the channel while the insulated gate holds a charge and keeps the channel open. This allows current to flow from the drain to the source when a positive voltage is applied. Since the presence of the voltage affects the charge on the gate, the resulting current is regulated, making it suitable for high efficiency applications such as in DC and solar panel applications.
In addition to being used in solar panel and DC applications, the IRFI640GPBF can also be used as a power switch in high-side load switch applications. A high-side load switch is used to control the current flow from a voltage source to a load. In this application, the IRFI640GPBF can be used to control the current passing through by regulating the voltage applied to the gate. Its low on-resistance reduces power losses, making the switch highly efficient.
The IRFI640GPBF is a versatile power FET manufactured by International Rectifier. With its high peak current rating, low on-resistance, and superior thermal performance, it is suitable for a wide range of applications including high-side load switch, DC-DC converters, DC motor control, and solar panel applications. Additionally, the simple working principle of the device requires minimal gate charge and allows for efficient current flow, making it an ideal choice for high efficiency power applications.
The specific data is subject to PDF, and the above content is for reference
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IRFI640GPBF Datasheet/PDF