Allicdata Part #: | IRFI740GPBF-ND |
Manufacturer Part#: |
IRFI740GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.4A TO220FP |
More Detail: | N-Channel 400V 5.4A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | IRFI740GPBF Datasheet/PDF |
Quantity: | 318 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 3.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFI740GPBF is an enhancement mode HEXFET Power MOSFET transistor. It belongs to the IRFI740 series which is made up of a variety of discrete products offering high reliability, very low on-resistance, and the benefits of excellent safe operating areas. The device is a high performing bridge rectifier, capable of providing over 25A of output current. It has a low capacitance, low gate charge, and low operating voltage, making it ideal for dc-to-dc or motor control applications.
The IRFI740GPBF is mainly used for power switching applications in battery-powered equipment, automotive and industrial systems. It can be used as a bridge rectifier for high frequency dc-to-dc converters in telecom, networking and server applications. Also, it has been designed to provide superior power savings for motor control applications, such as motorised wheelchairs, universal motor drivers and robotic systems.
The IRFI740GPBF works on the principle of enhancement mode. This is because electrons, the carriers of electric charge, are not involved in the operation of the transistor. In regular MOS transistors, the current flows from the source to the drain, while in enhancement mode transistors, electric fields are used to modulate the movement of electrons. This allows for less power consumption and higher efficiency.
This junction gate FET has a low on-resistance and is capable of delivering high current with low voltage drop. It is made up of a gate, source and drain. The gate is protected by an oxide layer which serves as an insulator and prevents electrical flow between the source and the drain. When a voltage is applied to the gate, an electrostatic field is created which attracts electrons from the source to the drain and allows current to flow from the source to the drain. The gate voltage determines the current flow through the device, making it an ideal choice for power efficient switching applications.
The IRFI740GPBF has a maximum voltage of 30V, a maximum drain current of 25A and a maximum gate charge of 12nC. It is also designed with enhanced body diode which provides a fast switching speed, low forward voltage drop, and less power losses. Other features of this device include low gate resistance, low power consumption and exceptional surge capability.
In conclusion, the IRFI740GPBF is an excellent choice for power switch applications, especially where high current with low voltage drop is required. It has a low capacitance, low gate charge and low operating voltage, making it an ideal device for dc-to-dc, motor control, and power switching applications. As it operates on the principle of enhancement mode, it allows low power consumption and higher efficiency. The device has a maximum voltage of 30V and maximum drain current of 25A, making it an ideal choice for high frequency dc-to-dc converters. With its enhanced body diode, it provides a fast switching speed, low forward voltage drop and exceptional surge capability, making it an excellent choice for power efficient switching applications.
The specific data is subject to PDF, and the above content is for reference
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