IRFI620G

IRFI620G is a high-power insulated-gate field-effect power MOSFET transistor. It is specifically designed for switching power supplies in electronic equipment that requires high performance capability and longer working life. The device is widely used in applications from the power supply to motor control.

Applications

IRFI620G is ideal for applications in high-efficiency switching power supplies where a very low rdsw is required. It is mainly used in applications such as switch-mode power supplies and high-frequency converters. It is suitable for high-efficiency 115V and 230V input ac-dc and dc-dc configurations. These devices can also be used for high-frequency motor control applications and SMPS/PFC/PSU motor drivers .

Working Principle

As a type of field-effect transistor, IRFI620G is constructed by five regions: drain, gate, source, body and substrate. Source and drain functions as the two current terminals and have the same electrical potential. Gate acts like a switch and its voltage can control the current flowing through the source-drain path. When a positive voltage is applied to the gate, it creates an electric field which attracts the free electrons and forms a conducting channel between source and drain. This creates a conducting path between source and drain and allows current to flow. On the other hand, when the gate voltage decreases to zero, the electric field will disappear and the current will be cut off.In order to get desired performance, a number of characteristics of the IRFI620G must be taken into account. These include forward transconductance (gm_fwd) and input capacitance (Ciss). gm_fwd is the ratio between change of drain current and change of gate voltage when drain-source voltage is constant. Ciss is the input capacitance of the MOSFET which is the ratio between change in drain-source voltage and change in gate voltage when the drain-source current is zero. In addition, the on-state resistance of the device (rds(on)) is also important when it comes to power dissipation.

Conclusion

IRFI620G is a high-power insulated-gate field-effect transistor. It is specifically designed for switching power supplies in electronic equipment that requires high performance capability and longer working life. The device is mainly used in applications such as switch-mode power supplies and high-frequency converters. Its working principle involves the establishment of an conducting channel between source and drain through the application of positive gate voltage. To get a desired performance, factors such as forward transconductance, input capacitance and on-state resistance must also be taken into account.