IRFI520N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220AB Full-Pak
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	330pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	200 mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRFI520N is an enhancement-mode silicon N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in a variety of electronics applications due to its high power handling capability and low on-resistance ratings. Its low on-resistance and high power-handling capability make it ideal for switching and amplifier applications.MOSFETs are made of a semi-conductor material, typically silicon, sandwiched between two metal plates, the source plate and a drain plate. A small gate voltage, typically between +5 and -12 volts, is then applied to the gate plate to control the flow of electrons between the source and drain plates. If the gate voltage is made positive, electrons move from the source to the drain (in a ‘forward’ direction); if the gate voltage is made negative, electrons move from the drain to the source (in a ‘reverse’ direction).The IRFI520N is a single-channel Enhancement-mode MOSFET, meaning it can be used for switching purposes. It is usually used to amplify or switch a small voltage or current, or to control the flow of electricity from a power source to an electrical component.When considering the application field of the IRFI520N, it is suitable for both switching and amplifier applications. It can be used to control a variety of electrical components and systems, including motors, relays, and LEDs. It can also be used for DC and AC power control, for adjusting voltage and current levels, and for setting and measuring frequency levels.For switching applications, the IRFI520N can be used to regulate the speed and power of a motor or other electric component. It can also be used to turn on and off power sources, and to provide a safety shutdown in case of power spike.For amplifier applications, the IRFI520N can be used to amplify signals. It can be used to increase the voltage or current of an input signal, or to increase the gain of a signal. It can also be used to reduce distortion and noise in an audio signal, or to improve the bandwidth of a signal.In terms of its working principle, the IRFI520N is an enhancement-mode MOSFET. This means it requires a small gate voltage to control the current between the source and drain plates. When the gate voltage is made positive, electrons flow from the source to the drain, and when the gate voltage is made negative, electrons flow from the drain to the source.The IRFI520N is rated for a maximum power dissipation of 150 Watts. This means it can safely dissipate up to 150 Watts of power. It is also rated for a maximum drain-source voltage of 600V and a maximum drain current of 2.5 Amps.To conclude, the IRFI520N is an enhancement-mode silicon N-Channel MOSFET that is widely used in a variety of electronics applications due to its high power handling capability and low on-resistance ratings. It is suitable for both switching and amplifier applications, and is rated for a maximum power dissipation of 150 Watts, a maximum drain-source voltage of 600V, and a maximum drain current of 2.5 Amps.

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