IRFI624G

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The IRFI624G Field Effect Transistor (FET) is a customer friendly general purpose N-Channel MOSFET from Infineon Technologies. This device is designed for electronic switching, high side load switching and level shifting applications in automotive and industrial systems. As a part of its product line, the IRFI624G is targeted to customer focused applications requiring a wide range of performance characteristics.

The IRFI624G is constructed using a vertical double-diffused silicon (VDS) bipolar junction technology (BJT). Altogether, the device is optimized to provide superior linearity, superior current gains, superior on-resistance and superior operating temperature. The VDS bipolar junction technology (BJT) has the advantage of providing superior voltage regulation when compared to conventional MOSFETs.

The power handling capability of the IRFI624G can be extended to 1.1W and 2.2W operation—thanks to its extremely low power consumption. The device also offers excellent thermal characteristics such as Rds, gate leakage and on-resistance; all contributing to superior dynamic response times and excellent ruggedness. Moreover, the internal source-to-drain resistance is designed to minimize the risk of in-rush current.

The IRFI624G is constructed with a buffered source, which helps reduce the gate capacitance and overall delay time. This single-N-channel device yields superior viewing angles and superior dielectric strength enabling it to be employed in applications with extremely stringent RF requirements. It also provides excellent drain-to-source leakage current protection.

The IRFI624G is available both in die and packaged versions with a wide range of package and die sizes. The die version offers a lead-free solderable passivation material, which reduces the thermal shock of the device, thereby increasing its reliability. It also has an integrated protection diode for reverse battery protection and is compatible with Infineon’s SOT-223 power performance and ultra-low profile packages.

The IRFI624G is specially designed to operate robustly in harsh electrical and thermal environments. Its EMC robustness enables it to meet the requirements of automotive environments, which are typically exposed to large levels of interference. Moreover, the presence of an internal separation between the gate metal and device silicon ensures that noise generated by the device is minimized.

The IRFI624G features an integrated thermal pad that allows heat to dissipate quicker and allows for increased current and power handling capabilities, resulting in improved reliability. It also provides reverse-battery protection and improved operation temperature range, making the IRFI624G an excellent choice for operation in high ambient temperatures. In addition, the device supports PWM and load management applications, making it ideal for automotive, industrial and other high current demand applications.

In short, the IRFI624G provides an extremely low Rds on-state resistance, an integrated thermal pad for improved heat conduction and an integrated source-drain separation to reduce EMI noise. Moreover, the device offers excellent dynamic response times, a wide operating temperature range, an integrated protection diode and reverse-battery protection. Together, these features make the IRFI624G an ideal choice for high reliability, low power consumption and excellent performance in automotive, industrial and other switching and level shifting applications.

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