Allicdata Part #: | IRFS11N50ATRRP-ND |
Manufacturer Part#: |
IRFS11N50ATRRP |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 11A D2PAK |
More Detail: | N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2... |
DataSheet: | IRFS11N50ATRRP Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.14870 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1423pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFS11N50ATRRP is a single-channel insulated-gate field effect transistor (IGFET) that is used for both high-power and mid-range energy applications. The IRFS11N50ATRRP comprises of a highly improved DMOS structure, and produces a high-speed switching action up to a voltage of 500V. It also has a low on-state resistance of just 11mΩ , which makes it highly suitable for high-current applications.
The IGFET works on the principle of gate control. It comprises of a semiconductor material with a gate on top, which is insulated from the substrate and the main body of the transistor. A voltage applied to the gate controls the channel resistance between the source and the drain, which in turn controls the amount of current flowing through the channel.
The ability of the IRFS11N50ATRRP to switch on and off quickly, makes it highly suitable for applications where low power loss is required. Such applications include DC-to-DC conversion, motor control, and power control. It is also commonly used in voltage regulators and switching power supplies. The low on-state resistance of the IRFS11N50ATRRP provides a current flow efficiency that is higher than other transistors, while the fast switching action allows it to switch on and off quickly. This makes it a reliable device for continuous use in high-power applications.
The IRFS11N50ATRRP can also be used in high-frequency applications like radio frequency (RF) amplifiers and power amplifiers. As the switching speed of the device is quite high, it can effectively detect and respond to various signals within its range. Furthermore, due to its low capacitance, the device can be used for wide band communication applications.
Apart from its fast switching action, the IRFS11N50ATRRP also offers excellent reliability. It features enriched packaging concepts, low parasitic inductance, and internal voltage protection. This ensures that the device is able to withstand high heat and static charge, as well as improve its customer satisfaction ratings.
Overall, the IRFS11N50ATRRP is a highly efficient single-channel insulated-gate field effect transistor that is widely used in high-power and mid-range energy applications due to its fast switching action, low on-state resistance, and excellent reliability. It can be used for applications like DC-to-DC conversion, motor control, power control, voltage regulators, switching power supplies, and high-frequency operations.
The specific data is subject to PDF, and the above content is for reference
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