IRFS4010TRRPBF

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IRFS4010TRRPBF transistor is a N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed by International Rectifier Corporation. The IRFS4010TRRPBF is a high-voltage enhancement-mode MOSFET that is intended for use in a variety of applications including portable and telecom equipment, personal computers, and industrial systems.

The IRFS4010TRRPBF transistor has an on-state resistance (RDS on) of 4 mΩ and an operating drain-source voltage (VDS) of 40 V. It is made up of a proprietary planar trench technology that helps in reducing low-voltage gate charge and on-state resistance. The device also has a low-leakage current (Idrss) of 10 µA. The IRFS4010TRRPBF can be used in a variety of applications such as synchronous rectifiers, switch-mode power supplies, and lighting control.

The IRFS4010TRRPBF transistor is fabricated using a process that is tightly controlled for uniform and repeatable performance within the allowable variation limits. The device is also provided with integrated protection features such as avalanche break-down rating, electro-static discharge (ESD) protection, and junction-gate threshold voltage (VGS) protection.

The working principle of IRFS4010TRRPBF is based on the property of a FET that an externally applied voltage can control the current flowing through it. The voltage applied to its Gate terminal causes the depletion or accumulation of charge carriers in the channel region (depending on the type of the FET) thus controlling the resistance of the channel. When the applied voltage to its Gate terminal exceeds a threshold voltage, the channel conductivity increases and the FET is in the ON state. Similarly, when the applied voltage to the Gate terminal is less than the threshold voltage, the channel conductivity decreases and the FET is in the OFF state.

The IRFS4010TRRPBF is commonly used in various applications such as switching, power converters, mobile communications, DC-DC converters, and LCD backlight control. The device is also well-suited to provide power switching in low voltage automotive applications. Moreover, the device can be used in applications that require BiPolar Power MOSFETs along with the benefits of the MOSFET technology.

The IRFS4010TRRPBF is a high voltage MOSFET with excellent on-state characteristics, high input impedance, low voltage drop, and low switching losses. It is also provided with integrated protection features such as Avalanche Break-Down Rating (ABR), Electro-Static Discharge (ESD) protection, and Junction-Gate Threshold Voltage (VGS) protection. The device is well-suited for applications that require reliable and efficient switching.

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