IRFS4229PBF

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Power Dissipation (Max):	330W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4560pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	48 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRFS4229PBF Application Field and Working PrincipleIRFS4229PBF is a high-performance N-channel integrated power field-effect transistor (also known as Field-effect transistor, or FET) designed to meet the most demanding needs of today’s power management solutions. This device is specifically designed to provide efficient and reliable switching capability in a variety of power management applications including power-down, stand-by, and normal operations.The IRFS4229PBF is available with a variety of surface-mount packages, including dual-mode surface-mount packages that offer increased thermal management capabilities. In addition, the device is also available in an industry-standard SO-8 package, providing an easy drop-in solution for existing designs.The IRFS4229PBF is a combination of a high power MOSFET and a high-side current sensing circuit. It operates in both normal current mode and slow and fast anti-cross conduction fail safe modes. The device features integrated protection features to provide maximum protection from over-temperature and over-current conditions. It also includes an adjustable current limit for improved design flexibility.The IRFS4229PBF is constructed using an advanced fabrication process that utilizes a dual thick-film technology to insure optimum performance and reliability. The device offers a thermal performance far superior to traditional MOSFET devices, achieving a lower RDS(on) and providing better temperature stability. Additionally, the device is designed to minimize switching losses, allowing increased efficiency and increased power density.The working principle of the IRFS4229PBF is based on the principle of controlling the flow of electrons within the device. As a MOSFET, it consists of two terminals, the gate and the drain, and a semiconductor material between them. When a voltage is applied to the gate, the electrons are attracted to the gate and the number of electrons within the semiconductor material increases. This increase in the number of electrons results in a lower resistance between the gate and the drain, allowing current to flow through the device.The IRFS4229PBF is primarily used in power management applications such as switching power supplies, DC-DC Converters, Uninterruptible power supplies (UPSs) as well as in automotive and consumer electronic applications. It can provide efficient and reliable switching capability in a variety of power management applications.It is also used in high-density power conversion circuit designs, such as LED lighting and LED drivers, Li-Ion battery charging circuits, and other high-density, high-power applications.The IRFS4229PBF is designed to provide superior performance, increased efficiency and greater design flexibility. Its advanced fabrication process and high-performance N-channel MOSFET provide greater thermal stability, lower RDS(on) and lower gate charge for improved power density and reduced power loss. The device is also designed with integrated protection features to help ensure safe operation in all applications.Overall, the IRFS4229PBF provides a reliable and efficient solution for a variety of power management applications. This high-performance N-channel MOSFET offers superior thermal performance, increased efficiency and improved power density. Additionally, it also features integrated protection features for improved safety in all types of applications. The combination of all these features make the IRFS4229PBF an ideal choice for power management solutions.

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