Allicdata Part #: | IRFS4410ZTRLPBFTR-ND |
Manufacturer Part#: |
IRFS4410ZTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 97A D2PAK |
More Detail: | N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | IRFS4410ZTRLPBF Datasheet/PDF |
Quantity: | 1600 |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Base Part Number: | IRFS4410 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4820pF @ 50V |
Vgs (Max): | ±20V |
Series: | HEXFET® |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 58A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFS4410ZTRLPBF (IRFS4410), which is a single N-channel through hole MOSFET, is a product of the IR Family. It is a high power MOSFET industrial grade device with a current rating of 44A and drain source voltage rating of 100V. It is characterized by a low on-resistance, a low off-state output capacitance, and a fast switching speed that makes it ideal for applications requiring low voltage and high current. Additionally, the low on-resistance makes the device suitable for switching applications that require a low density of resistance.
The IRFS4410ZTRLPBF is primarily used in switching applications. Its fast switching speed makes it ideal for applications such as power converters, motor and lighting controls, high frequency amplifiers, switching power supplies and high speed logic circuits. It is also suitable for applications in industrial and consumer electronics, and automotive applications.
The working principle of the IRFS4410ZTRLPBF is based on MOSFET technology. The device consists of a gate, drain, and source terminals. The gate terminal controls the flow of current through the MOSFET. When a positive voltage is applied to the gate terminal, it creates an electric field that bends the electrons in the silicon that are available near the gate terminal and allows them to flow through the MOSFET between the drain and source terminals. This results in an increased current flow through the MOSFET and allows it to be controlled precisely. When the positive voltage is removed from the gate terminal, the electric field is eliminated and the current flow ceases, allowing the MOSFET to be turned off.
The IRFS4410ZTRLPBF is a robust and reliable device, which makes it ideal for a wide range of applications. It is available in a variety of packages, including through hole, surface mount and leadless packages, which makes it easy to use and integrate into any system. The device can handle large amounts of current and has a low on-resistance, making it suitable for high current switching applications. It also has a low off-state output capacitance, which helps to reduce power dissipation and increases efficiency.
In conclusion, the IRFS4410ZTRLPBF is a single N-channel through hole MOSFET that is designed for switching applications. It is characterized by a low on-resistance, a low off-state output capacitance, and a fast switching speed that makes it ideal for applications requiring low voltage and high current. It is available in a variety of packages, making it easy to integrate into any system, and is suitable for a wide range of applications, including power converters, motor and lighting controls, high frequency amplifiers, switching power supplies and high speed logic circuits.
The specific data is subject to PDF, and the above content is for reference
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