Allicdata Part #: | IRFSL7430PBF-ND |
Manufacturer Part#: |
IRFSL7430PBF |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 195A TO262 |
More Detail: | N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | IRFSL7430PBF Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.32883 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14240pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 460nC @ 10V |
Series: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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What is the IRFSL7430PBF? The IRFSL7430PBF is a single field effect transistor (FET) from the Power Transistors range from International Rectifier Corporation. This is a n-channel device, utilizing the latest power MOSFET technology for high speed switching. It is capable of handling large currents and switching voltages up to 100 Volts.
The IRFSL7430PBF is a very efficient device, with a maximum on-state resistance of just 27 mΩ and a maximum gate-source voltage of -30V. It is rated for a maximum drain-source voltage of 100V and can handle peak drain-source currents of as high as 75A. The device temperature range is from -55°C to +150°C.
The IRFSL7430PBF has a wide variety of applications in the industrial and consumer electronics sector. It can be used in a range of switching applications, such as those found in industrial motor control and power supplies. It is also used for high current DC-DC converters found in automotive systems and for other power electronic switching applications.
The IRFSL7430PBF is a n-channel device, meaning that it can be used in a range of circuits where the flow of electrons is controlled by the gate-source voltage. The device has two separate connections, one to the drain and the other to the source. When a voltage is applied to the gate of the device, the electrons flow from the source to the drain and create a current.
The IRFSL7430PBF has two different operating modes. In the enhancement mode, the current flows from source to drain when the gate source voltage is at least +1V. In the depletion mode, the current is regulated by the voltage applied to the gate and can be adjusted by increasing or decreasing the gate-source voltage.
The IRFSL7430PBF is extremely reliable and durable, able to operate at high temperatures and in harsh application environments. It is also reasonably efficient, with a typical stand-by current of 4μA, which is around 10 times lower than the stand-by current required by most other devices. Furthermore, the IRFSL7430PBF has an extremely low gate charge, allowing for high frequency switching without sacrificing power efficiency.
The IRFSL7430PBF is an extremely powerful device and is used in a variety of high current and voltage applications. In summary, it is a MOSFET that offers excellent speed and efficiency in high power switching applications, and is capable of operating at high temperatures in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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