Allicdata Part #: | IRFSL7530PBF-ND |
Manufacturer Part#: |
IRFSL7530PBF |
Price: | $ 1.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 195A D2PAK |
More Detail: | N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | IRFSL7530PBF Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.18927 |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13703pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 411nC @ 10V |
Series: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFSL7530PBF is a general-purpose floating-source high-current MOSFET developed by Infineon Technologies. It enables fast switching and low on-resistance and is designed to be used in a range of power switching applications. In this article, the application field and working principle of IRFSL7530PBF are discussed.
As a MOSFET, IRFSL7530PBF is typically used in various electronic circuits, such as Audio amplification, Motor control, Voltage regulation and power supply switching. It is capable of handling large amount of input current as much as 27A and helps limit the voltage drop caused by non-linear loads on the power supply. It can also be used in high-efficiency power converters, such as AC-DC and DC-DC power converters, as well as motor controllers.
The IRFSL7530PBF is a Floating-Source (FS) high-current MOSFET. It is built with a vertical-diffused MOS (VMOS) structure and features a low Ron as well as high dv/dt/ton and rugged body-diode protection. This allows the device to run with high frequency and efficient switch time.
In its FS structure, the floating-source is located on the vertical arms of the VMOS. This structure allows the source of the MOSFET to work at the same signal potential as the drain and gate voltage levels, which helps to minimize gate drive requirements and reduce energy loss during switching operations.
The IRFSL7530PBF offers gate charge feed-through (GFET) protection, which helps to decrease the gate-to-source capacitance mismatch caused by the device\'s fast switching and EMI/EMC noise. This allows the MOSFET to reduce the drive requirements of the gate current and operate efficiently for a wide range of switching applications.
Apart from its fast switching performance, the IRFSL7530PBF\'s low Ron of 0.4mΩ is a major advantage. This helps the device to handle high current with low power losses, reducing the need for extra external cooling systems. It also increases the efficiency of power converters by minimizing energy losses during switching operations.
In addition to its FS structure and GFET protection, the IRFSL7530PBF also features built-in ESD protection. This helps to protect the device from electrostatic discharges, which can cause device failure or system malfunctions.
In conclusion, the IRFSL7530PBF MOSFET is a robust solution for various electronic switching applications, such as audio amplification, motor control, voltage regulation and power supply switching. It is built with a Floating-Source MOSFET structure and offers fast switching, low Ron, and built-in ESD and GFET protection.
The specific data is subject to PDF, and the above content is for reference
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