IRFZ44ESTRR Allicdata Electronics
Allicdata Part #:

IRFZ44ESTRR-ND

Manufacturer Part#:

IRFZ44ESTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 48A D2PAK
More Detail: N-Channel 60V 48A (Tc) 110W (Tc) Surface Mount D2P...
DataSheet: IRFZ44ESTRR datasheetIRFZ44ESTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFZ44ESTRR is a field-effect transistor (FET) designed for power switching applications. It is a single N-channel, enhancement-mode depletion-mode MOSFET device, meaning it can control current flow, or the ability to turn a circuit "on" and "off."

The IRFZ44ESTRR is a type of power MOSFET. A MOSFET is a wide-channel semiconductor device that acts like an electronic switch, capable of turning power supplies "on" or "off" by controlling the access of certain electrical signals. The device\'s on and off states are determined by differing levels of voltage. MOSFET devices are designed for high-voltage and high-power applications, and the IRFZ44ESTRR is no exception.

The design of the IRFZ44ESTRR includes a gate, drain, and source. The gate terminal is used to control the flow of electrical current, while the drain and source terminals work together to supply and remove that current. The gate is controlled by a signal voltage, and the current between the drain and source is regulated by the gate voltage. When the gate voltage is high, current can easily flow between the drain and source; when it is low, current flow reduces substantially.

The IRFZ44ESTRR is an excellent choice for applications such as lighting control systems, motor control, and AC/DC power supplies. Due to its high switching frequency and low on-state resistance, this device is the ideal choice for power-management applications that require both efficiency and accuracy. The device has a maximum drain source breakdown voltage (VDSS) of 55 volts and a maximum drain current (ID) of 4.2A, which makes it suitable for most medium-power applications.

The IRFZ44ESTRR can be further characterized by a number of parameters. Its on-state resistance (RDS(On)) is only 8.5 milliohms at 25° Celsius, which is much lower than the RDS(On) of many other MOSFET devices. Also, its maximum junction temperature (Tj(max)) is 175 °C. The maximum gate threshold voltage (VGS(th)) and maximum gate-source voltage (VGS) are 4V and 20V, respectively. Finally, its channel-to-channel matching parameters are far better than most other MOSFET devices.

The IRFZ44ESTRR is a reliable and efficient MOSFET device that is suitable for a wide range of applications. Its low on-state resistance, high switching frequency, and low gate threshold voltage make it a powerhouse device for motor control and power-management applications. This device\'s excellent channel-to-channel matching parameters also adds to its appeal.

The specific data is subject to PDF, and the above content is for reference

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