| Allicdata Part #: | IRL3202STRR-ND |
| Manufacturer Part#: |
IRL3202STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 48A D2PAK |
| More Detail: | N-Channel 20V 48A (Tc) 69W (Tc) Surface Mount D2PA... |
| DataSheet: |  IRL3202STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 700mV @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 69W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 15V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 29A, 7V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 7V |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The IRL3202STRR (hereon referred to as IRL3202) is a standard N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The device offers a wide range of performance and a gate sourced current capability of 4A continuous current. It is a versatile device that is well suited for many applications and provides a number of functional attributes.
The IRL3202 has an RDSon of 8.7mΩ at 10V and a drain to source voltage (VDS) of 20V. A current/voltage capability of 4A/20V, together with the device\'s low on resistance, makes the IRL3202 an excellent choice for a wide range of applications, such as load switching, power supplies and motor control. Furthermore, the IRL3202 has a very low quiescent gate charge of 16nC, making it a suitable choice for applications with high switching speed requirements.
The IRL3202 is a three-terminal device featuring a drain, gate and source terminal. The drain and source form the main current path for the device, whereas the gate terminal acts as the controlling element which allows for the selective biasing of the device. The gate terminal is very sensitive to the voltage signal applied to it and a very small change in voltage can alter the current that is flowing through the device.
The working principle of the IRL3202 is based on the MOSFET’s ability to control the current flow in the device by altering the voltage applied to the gate terminal. When a voltage is applied to the gate terminal, the drain to source voltage (VDS) increases and ultimately reaches a point where the current flowing through the device is limited. In this way, the IRL3202 is capable of providing a very precise control over the current flow in the device.
The IRL3202 has a number of features which make it an ideal choice for a wide range of applications. It has a low RDSon of 8.7mΩ and a drain-to-source voltage (VDS) of 20V. In addition to this, the device also has an impressive 4A/20V current/voltage capability, and is especially well-suited for applications that require a high switching speed.
The IRL3202 is primarily used in switching applications such as power supplies, motor control and load switching. Due to its high current and voltage capabilities, it can easily function as the primary switch in these applications. Furthermore, the device has a very low quiescent gate charge of 16nC, making it suitable for use in applications that require high switching speeds.
Overall, the IRL3202 is a versatile MOSFET device which can be used in a variety of applications. Its low RDSon, high VDS, high current/voltage capability and low quiescent gate charge make it a suitable choice for use in a wide range of applications. Moreover, the working principle of the IRL3202 is based on its ability to control the current flow in the device by varying the gate voltage, which provides precise control over the current flow in the device.
The specific data is subject to PDF, and the above content is for reference
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