Allicdata Part #: | IRL3716LPBF-ND |
Manufacturer Part#: |
IRL3716LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 180A TO-262 |
More Detail: | N-Channel 20V 180A (Tc) 210W (Tc) Through Hole TO-... |
DataSheet: | IRL3716LPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5090pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL3716LPBF is a P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is widely used in various applications. It has a various source-drain voltage of 20V, drain-source current of 10A and drain-source resistance of 4mΩ.It belongs to the single FETs and MOSFET family.
The IRL3717LPBF is used in many different applications. These applications range from power supplies, motor drives, consumer electronics, robotics, and more. Additionally, this device is widely used in Switch Mode Power Supplies (SMPS) for power converters. It also has many other applications including audio amplifiers, automotive electronics, and more.
The IRL3717LPBF has high maximum drain current which allows it to be used in higher power applications. It also has low RDS(on) which allows for low power loss applications due to its high efficiency. Moreover, it features high switching frequency allowing it to be used in high speed applications. Additionally, its low output capacitance allows it to be used in high frequency switching applications.
When it comes to the IRL3717LPBF’s working principle, it is quite simple. It is a field-effect transistor, which means that its conductivity is controlled by an electric field. In the case of a MOSFET, the source terminal is connected to the drain terminal via a semiconductive channel. Voltage is applied to the gate, which controls whether or not the channel is activated. The IRL3717LPBF operates by creating negative charges at the channel-end which attract positively charged electrons from the source, thereby increasing its connection (and thus the current) between the source and the drain.
In summary, the IRL3717LPBF is an excellent device for use in a wide range of applications. It has a variety of features that make it suitable for both high power and low power applications. Additionally, it has a simple operating principle which makes it an excellent choice for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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