IRL3103D1PBF Allicdata Electronics
Allicdata Part #:

IRL3103D1PBF-ND

Manufacturer Part#:

IRL3103D1PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 64A TO-220AB
More Detail: N-Channel 30V 64A (Tc) 2W (Ta), 89W (Tc) Through H...
DataSheet: IRL3103D1PBF datasheetIRL3103D1PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRL3103D1PBF is an N-channel power MOSFET (metal oxide semiconductor field-effect transistor) with a logic level gate, which is designed to perform under extreme conditions. It has an ID rating of 3A at a drain-source voltage (VDS) of 60V, as well as a maximum drain current of 3A and maximum drain-source voltage of −60V. These specifications make it a perfect choice for many industrial and other applications requiring reliable, long-lasting performance.The IRL3103D1PBF utilizes an lateral, single N-channel MOSFET with a drain current of 3A and a drain-source voltage of −60V, making it ideal for applications involving high-frequency switching, current sensing and level shifting. Additionally, it features a logic level gate voltage and an integrated protection diode for reverse current protection. With its fast switching speed, this device is perfect for applications involving high-speed pulse-width modulation (PWM) and power switching.The working principle of the IRL3103D1PBF is quite simple. The MOSFET provides a high-impedance gate path between the drain and source, allowing it to act as a switch. When the gate voltage is below the threshold voltage, the MOSFET remains in a non-conductive state, blocking any current from flowing between the drain and source. However, when the gate voltage is above the threshold voltage, the MOSFET switches on, allowing current to flow between the drain and source.The IRL3103D1PBF is commonly used in a variety of applications, including motor control, power switching, energy conversion and current sensing. It is also well-suited for use in automotive, consumer, industrial and medical devices, including pumps, motors, lighting, UPS systems and battery chargers.In addition, the IRL3103D1PBF’s low on-resistance, high surge capability and fast switching speed allows it to be used in high-power switching applications with quick response times. This makes it an ideal choice for applications with multiple-output current needs and high-speed switching requirements. Furthermore, its small size and low-profile allows it to be easily integrated into a variety of applications.To sum up, the IRL3103D1PBF is an ideal choice for a variety of applications requiring reliable, long-lasting performance. It features a low-profile and high-impedance gate path, as well as a logic level gate voltage and an integrated protection diode for reverse current protection. It is commonly used for motor control, power switching, energy conversion and current sensing, making it the perfect choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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