IRL3103D2STRL Allicdata Electronics
Allicdata Part #:

IRL3103D2STRL-ND

Manufacturer Part#:

IRL3103D2STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 54A D2PAK
More Detail: N-Channel 30V 54A (Tc) Surface Mount D2PAK
DataSheet: IRL3103D2STRL datasheetIRL3103D2STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRL3103D2STRL is considered as one of the overachieving transistor family. These transistors come from a family of single field effect transistors (FETs) that also include metal–oxide–semiconductor FETs (MOSFETs). It is a power MOSFET, a device with an amazingly high performance that allows for low energy consumption.

The power MOSFETs have been changing the way of conducting high-frequency currents of different amplitudes. Some of the primary applications of IRL3103D2STRL transistors are high-frequency switching, telecom and DC motor control, power management systems, pulse width modulation, and more. With these transistors, power can be delivered in a reliable and efficient way. These transistors function on a variety of controlling and power signals, enabling engineers to design circuits in areas where accuracy of high current delivery is required.

The specific IRL3103D2STRL are optimized for low gate-charge and low on-state resistance. The features of these transistors include low operating temperature (on-state resistance is maintained in temperatures up to 150 degrees Celsius) and faster switching speeds. This is enabled by the low capacitance and low input capacitance. Low gate charge enables faster switching times and the low output capacitance ensures faster turn-off time.

The most important feature of these transistors is the threshold voltage. It is at such a low level (1.5 V) that they can be used in many applications, offering more flexibility. The on-resistance is also kept low, up to 0.0039 ohms which facilitates a vast range of operating currents.

The operating principle behind IRL3103D2STRL is simply the movement of electrons. When the gate voltage is applied, electrons move into the channel due to the electric field. This creates a conductive channel and when voltage is applied, the current flows through it. The basic construction of these transistors consists of a silicon dioxide layer, a channel, and two source/drain terminals. The switching of the current is done by manipulating the voltage across the gate.

IRL3103D2STRL transistors offer high-frequency switching at low power consumption and low on-state resistance levels. It is ideal for many practical applications due to its low threshold voltage and high performance. These transistors are a reliable and energy-efficient alternative to conventional transistor technologies. With their power MOSFET performance and their promising feature list, the IRL3103D2STRL transistors prove to be the best for power management and high-frequency operations.

The specific data is subject to PDF, and the above content is for reference

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