IRL3705ZSTRLPBF Allicdata Electronics

IRL3705ZSTRLPBF Discrete Semiconductor Products

Allicdata Part #:

IRL3705ZSTRLPBFTR-ND

Manufacturer Part#:

IRL3705ZSTRLPBF

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2P...
DataSheet: IRL3705ZSTRLPBF datasheetIRL3705ZSTRLPBF Datasheet/PDF
Quantity: 1600
1 +: $ 0.76000
10 +: $ 0.73720
100 +: $ 0.72200
1000 +: $ 0.70680
10000 +: $ 0.68400
Stock 1600Can Ship Immediately
$ 0.76
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRL3705ZSTRLPBF, a 30V power MOSFET from Infineon, is a single N-channel device that can be used in a variety of applications. It features an extremely low on-resistance of 0.0074 &Ohm; and can handle currents up to 60A.

The maximum voltage the device is rated for, 30V, along with the low on-resistance, makes the IRL3705ZSTRLPBF ideal for high-power switching applications. This could include applications where the device is used to switch heavy loads, ranging from lighting, motors and other high-current devices.

The device also offers ruggedness and noise immunity. This means that it is suitable for use in high-voltage applications such as motor drives or power supplies. It is also suitable for use in automotive applications, such as power steering systems, and can withstand high temperature and vibration.

In addition to its robustness, the IRL3705ZSTRLPBF features a low gate-charge which helps minimize switching losses and a low drain-source diode reverse recovery time, making it suitable for high frequency switching applications such as in green energy systems.

The IRL3705ZSTRLPBF is a single N-channel power MOSFET, meaning it has two terminals; drain and source. The device is constructed so that when a voltage is applied to the gate, it will attract electrons, resulting in conduction between the drain and the source.

The MOSFET acts like a switch, with the drain current controlled by the gate voltage. When the gate voltage is low, the MOSFET is off and when it is high the MOSFET is on. This makes the MOSFET useful as a switch or as an amplifier in a wide range of electrical circuits.

The IRL3705ZSTRLPBF is designed to be used in a variety of applications. It is suitable for power switching applications where high voltage, current handling capabilities and low on-resistance are desired, as well as for high frequency switching applications such as in green energy systems. It is also suitable for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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