IRL3713STRRPBF Allicdata Electronics
Allicdata Part #:

IRL3713STRRPBF-ND

Manufacturer Part#:

IRL3713STRRPBF

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 260A D2PAK
More Detail: N-Channel 30V 260A (Tc) 330W (Tc) Surface Mount D2...
DataSheet: IRL3713STRRPBF datasheetIRL3713STRRPBF Datasheet/PDF
Quantity: 1000
800 +: $ 1.12750
Stock 1000Can Ship Immediately
$ 1.25
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The IRL3713STRRPBF is an advanced silicon carbide power MOSFET technology that is designed to drive high-power applications. In this way, IRL3713STRRPBF offers significant advantages over silicon MOSFETs, such as higher efficiency, lower operating temperatures, and lower gate charge. This product features features a wide range of output power capabilities, from 75W to 600W, as well as an integrated, logic-level gate driver. Additionally, this device offers a low on-resistance RDS(on) up to 0.010 Ohms. All these features make IRL3713STRRPBF the perfect solution for demanding power applications.

IRL3713STRRPBF is commonly used in applications such as DC-DC converters, high-power inverters, PFC controllers, boost converters, and other power driver circuits. Its wide operating temperature range allows it to be used in even the most demanding conditions. Furthermore, its reliable and robust design also ensures that it can handle large and dynamic loads.

IRL3713STRRPBF works on the principle of voltage control and is an N-Channel MOSFET. This device is primarily used for switching applications, including motor control and adjustable power and over-current protection. It works by relying on an external PWM signal applied to the gate pin, which controls the power to the load. The higher the control signal, the greater the power that can be delivered to the load. It also features a high-performance gate drive with a Driver-Off Protection (DOP) circuit for improved safety. Additionally, its flexible package options, including through-hole and surface mount, make it an ideal choice for a broad range of applications.

In summary, the IRL3713STRRPBF is an innovative silicon carbide power MOSFET technology that provides excellent performance, reliability, and efficiency in high-power applications. It features a wide temperature range, an integrated logic-level gate driver, a low RDS(on) up to 0.010 Ohms, as well as flexible package options. It is suitable for a variety of power applications, including DC-DC converters, high-power inverters, PFC controllers, and boost converters. Finally, its usage is based on the principle of voltage control, and relies on external PWM signals for reliable operation.

The specific data is subject to PDF, and the above content is for reference

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