IRL3303D1S

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The IRL3303D1S MOSFET is a n-channel enhancement mode power field effect transistor specifically designed for use in automotive and other high temperature applications. This transistor has been designed and developed for use in applications such as DC/DC converters, DC/AC inverters, motor control and other higher power applications. It features high current capabilities, high operating temperature, and a low drain-source on resistance (RDS(on)), making it ideal for applications where power handling, ruggedness and thermal stability are required.

The IRL3303D1S MOSFET has a max drain current rating of 95A and a drain-source on resistance (RDS(on)) of 7 mΩ at 10V. This makes it suitable for applications requiring high currents at low voltage levels, such as automotive power converters, DC/DC converters, and DC/AC inverters.

The IRL3303D1S MOSFET is a voltage-controlled device, which means that it can be used to switch devices on or off under specific conditions. When the gate-source voltage (Vgs) is low, the MOSFET is in its off state, meaning that it offers a high resistance between its drain and source terminals. When Vgs increases, the MOSFET begins to conduct current and can be used to switch other devices on or off. This makes it ideal for applications where switching control is required, such as motor controllers and power converters.

The IRL3303D1S MOSFET also features a high drain-source breakdown voltage (BVDSS) of 100V, making it well-suited for applications that require high voltage switching. It also features a low RDS(on) value, making it suitable for applications where power handling and thermal stability are important. This transistor has a low gate capacitance, meaning that it can be operated at high frequencies with minimal noise.

The IRL3303D1S MOSFET is a popular choice for automotive and other high temperature applications, where its low drain-source on resistance (RDS(on)) and high current capabilities make it ideal for applications requiring high power levels. It is also suitable for applications where switching control, thermal stability and power handling are desired.

In summary, the IRL3303D1S MOSFET is an n-channel enhancement mode power field effect transistor specifically designed for use in automotive and other high temperature applications. It has a high current-handling capability, a low drain-source on resistance (RDS(on)), and a high drain-source breakdown voltage (BVDSS). It is a voltage-controlled device, meaning that it can be used to switch other devices on or off under specific conditions. This makes it ideal for applications where switching control, thermal stability and power handling are required.

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