IRL3502STRR

Vgs(th) (Max) @ Id:	700mV @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4700pF @ 15V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7 mOhm @ 64A, 7V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 7V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The IRF3502STRR is a single-gate enhancement-mode power MOSFET that is designed for use in a variety of applications. This MOSFET is particularly suitable for DC motor control, solenoid control, voltage regulation, and switching power supplies. The IRF3502STRR uses an advanced technology to provide high performance and reliability with low gate charge and low capacitance. In this article, we will discuss the general application field for the IRF3502STRR, as well as its working principle.

Application Field

The IRF3502STRR has a number of different applications in the realms of power management and design. It is designed to be used as an interface between the high-voltage power supply and the small-signal control circuitry, including a variety of different digital logic circuits. Some of the specific applications where this MOSFET can be used include DC motor control, solenoid control, voltage regulation, and switching power supplies. The IRF3502STRR is especially useful when used in applications where low power consumption and low heat dissipation are both important. This is because of its low gate charge and low capacitance, both of which help to ensure that power is consumed efficiently and that there is no unnecessary heat generated.

Working Principle

The IRF3502STRR is a single-gate enhancement-mode power MOSFET, which means that it is a field effect transistor. This type of transistor is composed of source and drain terminals, which are separated by a channel of silicon, and a gate terminal. When the gate terminal is appropriately biased, the electric field generated between the gate and the source creates an inversion layer in the channel of silicon which can then be used to control the drain current. To understand how the IRF3502STRR works, it is first important to understand how electric fields behave. Electric fields act in two directions, a positive direction and a negative direction. In the case of the IRF3502STRR, when the gate terminal is positively biased relative to the source terminal, the electric field generated between them attracts free electrons in the channel of silicon and causes them to accumulate near the gate, creating an inversion layer. When the gate voltage is sufficiently positive, the current between the source and the drain can now be controlled.

Conclusion

The IRF3502STRR is a single-gate enhancement-mode power MOSFET that is designed for use in a variety of applications. It has a number of specific applications, including DC motor control, solenoid control, voltage regulation, and switching power supplies. This MOSFET uses an advanced technology to provide high performance and reliability with ultra-low gate charge and low capacitance. It works on the principle of an electric field, attracting free electrons in the channel of silicon and creating an inversion layer to control the drain current.

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