IRL3705ZS Allicdata Electronics
Allicdata Part #:

IRL3705ZS-ND

Manufacturer Part#:

IRL3705ZS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2P...
DataSheet: IRL3705ZS datasheetIRL3705ZS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3705ZS is a highly efficient and reliable n-channel enhancement mode power MOSFET designed for switching and linear applications. It has a low gate threshold voltage, which means small power is needed on the gate in order to turn it on. It also offers excellent performance in high-frequency applications.

The IRL3705ZS has a maximum drain current of 27A and a maximum drain-source voltage of 60V, making it suitable for a wide range of applications. The device also has a low gate-source capacitance and low on-resistance, making it suitable for high-frequency applications.

This device is typically used in applications such as motor drives, power supplies, amplifiers, and high-frequency switching applications. It is also suitable for battery-powered applications, as it has low power consumption and operates at low currents. It is suitable for linear or switching applications where high efficiencies are required.

The IRL3705ZS is a single-channel MOSFET, meaning that it is designed to be used in single-input and single-output systems. It is designed to be used as a switch, with the input signal applied to the gate and the output connected to the drain. It is designed such that when the gate signal is applied, the MOSFET turns on and signals which flow in the channel can pass through. The gate threshold voltage is the voltage required to turn the MOSFET on. The IRL3705ZS has a low gate threshold voltage, which means small power is needed on the gate in order to turn it on.

The IRL3705ZS works by using the principles of field effect transistors (FETs). FETs are three terminal devices, with a source, gate, and drain. The source is connected to the negative voltage supply, while the gate is connected to the input signal. The drain is connected to the positive voltage supply. When the gate signal is applied, electrons from the source flow into the gate and this forms a channel in the device. The electrons then flow into the drain, and the current is determined by the voltage applied to the gate.

The IRL3705ZS is a reliable and efficient MOSFET which is suitable for a wide range of applications. Its low gate threshold voltage makes it ideal for high-frequency applications and it has a low on-resistance and gate-source capacitance, which makes it suitable for linear applications as well. It is a single-channel device and requires only a small amount of power to turn it on.

The specific data is subject to PDF, and the above content is for reference

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