IRL3402STRR

Vgs(th) (Max) @ Id:	700mV @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3300pF @ 15V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	78nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 51A, 7V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 7V
Current - Continuous Drain (Id) @ 25°C:	85A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The IRL3402STRR application field is one of the most essential areas in the field of transistors, FETs and MOSFETs. The IRL3402STRR application field is primarily related to the usage of a single enhancement-type, high-voltage, low on-resistance MOSFET. This particular FET allows the user to achieve superior performance in multiple applications. This document describes the working principle of the IRL3402STRR, which helps to explain its use in a variety of applications.

Overview of FETs and the IRL3402STRR

FETs (field-effect transistors) are devices that can be used to form a controllable connection between two points, allowing current to flow depending on the amount of electrical charge placed on the gate. This type of transistor is generally used to switch between two stable states, on or off. The IRL3402STRR is an enhancement-type, high-voltage, low on-resistance MOSFET (metal-oxide-semiconductor FET). It has a threshold voltage of 5V and an RDSon (drain-source on resistance) of less than 1 ohm. Its drain-source breakdown voltage is 100-200V, and its gate-source breakdown voltage is 25V. Furthermore, it has excellent EMI (electromagnetic interference) immunity and requires no extra gate protection circuits.

Application Areas of IRL3402STRR

The IRL3402STRR is primarily used in the fields of automotive, industrial and consumer applications. In the automotive industry, the IRL3402STRR is used for high-power motor-control applications and for lighting circuits. It is also used for switching power supplies for entertainment systems, batteries and solar chargers. In the industrial sector, the IRL3402STRR is used for the control of large motors, temperature management in industrial processes, and switching power supplies for mission-critical applications. The most common application of the IRL3402STRR in the consumer industry is making banknotes and ID cards counterfeit-proof. It is also used for motion control in fans, appliances and toys.

Working Principle of IRL3402STRR

The working principle of the IRL3402STRR is based on the underlying physics of electrons passing through metal-oxide-semiconductor structures, which are formed by the metal gate, oxide layer, and semiconductor material. The metal gate acts like a capacitor, controlling the amount of charge that moves through the metal-oxide-semiconductor junction between the drain and source. As the metal gate is charged with electrons, it attracts mobile electrons (free carriers) from the semiconductor substrate, creating a conductive channel between the drain and source. This conductive channel reduces the resistance between the drain and source and allows current to flow from the drain to the source. When the metal gate is not charged, the resistance between the drain and source increases and no current flows. This is called the \'off\' or \'quiescent\' state.

Conclusion

The IRL3402STRR application field is centered around the use of a single, enhancement-type, high-voltage, low on-resistance MOSFET which can be utilized to create superior performance in many different application areas. Its working principle is centered on the metal-oxide-semiconductor junction formed by the metal gate, oxide layer, and semiconductor material. In this type of field-effect transistor, the amount of charge on the gate affects the drain-source resistance which in turn controls the amount of current that passes between the two.

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