IRL3714ZSTRRPBF

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	16 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.2nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	550pF @ 10V
FET Feature:	--
Power Dissipation (Max):	35W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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The IRL3714ZSTRRPBF is a field-effect transistor (FET) that falls under the umbrella of a "single" MOSFET. MOSFETs, or metal-oxide-semiconductor FETs, are a type of transistor which uses an electric field to modify the conductivity between source and drain terminals. This technology allows for great precision and control of current flow in various electronic circuits. The IRL3714ZSTRRPBF is a N-channel enhancement-mode FET with a drain-source voltage of 60 V and maximum drain current of 12 A. It has a break-down voltage rating of 10.7 V, and a maximum drain-source-on-resistance of 37 mΩ at V GS = 10V. The IRL3714ZSTRRPBF is sensitive to electrostatic discharge (ESD) with a rating of 2 kV HBM. It is an ideal device for power management applications where high-current, high-speed switching is required. The working principle of the IRL3714ZSTRRPBF is based on the behavior of an electric field, which is generated by applying a voltage between a gate and source terminal. This electric field will cause a change in the characteristics of the channel. When a positive voltage is applied, the channel will become narrower, lowering the current flow. A negative voltage will have the opposite effect, causing the channel to become wider thus increasing the current flow. This action of controlling the conductivity between the source and drain terminals is called channel modulation, and it is the primary basis of the device’s functionality. With the help of an adjustable current source, or a gate driver, the gate voltage of the IRL3714ZSTRRPBF can be varied to precisely control the current flow. This is useful for applications such as solid-state relays, motor control, and switching power supplies. The IRL3714ZSTRRPBF also has an inherent immunity to thermal runaway due to its very low gate-leakage current, compared to other FETs. This makes the device a reliable choice for many applications where extreme temperatures may be encountered. In addition, the device has an extended operating temperature range if -55°C to 150°C, which allows for greater versatility in its applications. The IRL3714ZSTRRPBF can be used in a variety of applications including power conversion, motor control, power management, and switching power supplies. Its low on-resistance, high drain-source voltage, and high drain current capability makes it well-suited for applications that require precise control and power handling. It can also be utilized in switching circuits which require high speed and low losses. The ability to operate over an extended temperature range provides additional durability and stability in circuits that may be subjected to extreme temperatures. In summary, the IRL3714ZSTRRPBF is a single MOSFET which utilizes an electric field to control the conductivity between a source and drain terminal. This field-effect transistor has a maximum drain-source voltage of 60 V and a maximum drain current of 12 A. It is well-suited for power management and switching applications, and can operate over an extended temperature range of -55°C to 150°C.

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